Mask, exposure apparatus and device manufacturing method

ABSTRACT

A circular cylinder-shaped mask is used to form an image of a pattern on a substrate via a projection optical system. The mask has a pattern formation surface on which the pattern is formed and that is placed around a predetermined axis, and the mask is able to rotate, with the predetermined axis taken as an axis of rotation, in synchronization with a movement of the substrate in at least a predetermined one-dimensional direction. When a diameter of the mask on the pattern formation surface is taken as D, and a maximum length of the substrate in the one-dimensional direction is taken as L, and a projection ratio of the projection optical system is taken as β, and circumference ratio is taken as π, then the conditions for D≧(β×L)/π are satisfied.

CROSS-REFERENCE TO RELATED APPLICATION

This is a Continuation Application of International Application No.PCT/JP2007/067512, filed Sep. 7, 2007, which claims priority to JapanesePatent Application No. 2006-244269 filed on Sep. 8, 2006. The contentsof the aforementioned applications are incorporated herein by reference.

BACKGROUND

Field of the Invention

The present invention relates to a mask, an exposure apparatus thatexposes a substrate, and a device manufacturing method.

Description of Related Art

Among exposure apparatuses that are used in photolithographicprocessing, as is described in the patent documents such as JapanesePatent Application Publication Nos. H07-153672 A, H08-213305 A, and2006-093318 A, an exposure apparatus is known that exposes a substrateusing a circular cylinder-shaped or circular column-shaped mask.

It is necessary to precisely adjust the positional relationship betweenthe mask and the substrate not only when a plate-shaped mask is used,but also when a substrate is exposed using a circular cylinder-shaped orcircular column-shaped mask. If the positional relationship between themask and the substrate cannot be precisely adjusted, or if there is achange in the positional relationship between the mask and the substratebecause of vibration or the like, there is a strong possibility that itwill not be possible to properly expose the substrate using an image ofthe pattern on the mask.

Moreover, when, for example, a substrate is exposed while it being movedin synchronization with the movement of a mask, in order to properlyexpose the substrate, after the acceleration of the mask and/orsubstrate has ended, it is necessary in some cases to provide a waittime (i.e., a static time) for any generated vibration to settle downand for the speed to become constant. In cases such as these, if thereare frequent changes in the movement direction of the mask and/or themovement direction of the substrate, then the acceleration actionincreases by the same extent, so that it becomes necessary for anextended static time to be provided. In this case, the time that cannotbe used for exposure becomes even longer so that there is a possibilitythat throughput will be reduced. In order to limit any deterioration inthroughput, it is desirable for the number changes in the movementdirections of the mask and/or substrate to be kept as few as possible,and for any vibration that occurs to be allowed to rapidly settle.

A purpose of some aspects of the present invention is to provide a maskthat makes it possible to suppress any decrease in throughout and toform a superior image of a pattern on a substrate. Another purpose is toprovide an exposure apparatus and a device manufacturing method thatmake it possible to suppress any decrease in throughput and to properlyexpose a substrate using an image of a pattern.

SUMMARY

A first aspect of the present invention is a mask which is used to forman image of a pattern on a substrate via a projection optical system,and includes: a pattern formation surface on which the pattern is formedand that is placed around a predetermined axis; and a circularcylinder-shaped body which has the pattern formation surface, and whichis able to rotate, with the predetermined axis taken as an axis ofrotation, in synchronization with a movement of the substrate in atleast a predetermined one-dimensional direction, wherein when a diameterof the mask on the pattern formation surface is taken as D, and amaximum length of the substrate in the one-dimensional direction istaken as L, and a projection ratio of the projection optical system istaken as β, and circumference ratio is taken as π, then the conditionsfor D≧(β×L)/π are satisfied.

According to the first aspect of the present invention, it is possibleto suppress any deterioration in throughput and form a superior image ofa pattern on a substrate.

A second aspect of the present invention is a mask which is used to forman image of a pattern on a substrate via a projection optical system,and includes: a pattern formation surface on which the pattern is formedand that is placed around a predetermined axis; and a circularcylinder-shaped body which has the pattern formation surface, and whichis able to rotate, with the predetermined axis taken as an axis ofrotation, in synchronization with a movement of the substrate in atleast a predetermined one-dimensional direction, wherein when a diameterof the mask on the pattern formation surface is taken as D, and amaximum length of the substrate in the one-dimensional direction istaken as L, and a projection ratio of the projection optical systemtaken as β, and circumference ratio is taken as π, then the conditionsfor (β×L)/π>D≧(β×L)/(2×π) are satisfied.

According to the second aspect of the present invention, it is possibleto suppress any deterioration in throughput and form a superior image ofa pattern on a substrate.

A third aspect of the present invention is an exposure apparatus which,using the above described mask, exposes a substrate with an image of apattern formed on the mask, and includes: a mask driving apparatus whichis able to rotate the mask with the predetermined axis taken as an axisof rotation; a substrate driving apparatus which is able to move thesubstrate in at least a predetermined one-dimensional direction insynchronization with the rotation of the mask; and a projection opticalsystem that projects the image of the pattern on the mask onto thesubstrate.

According to the third aspect of the present invention, it is possibleto suppress any deterioration in throughput and form a superior image ofa pattern on a substrate.

A fourth aspect of the present invention is an exposure apparatus whichexposes a substrate with an image of a pattern, and includes: a holdingmember which removably holds a side surface of a circularcylinder-shaped mask which has a pattern formation surface on which apattern has been formed and which is placed around the predeterminedaxis.

According to the fourth aspect of the present invention, it is possibleto suppress any deterioration in throughput and form a superior image ofa pattern on a substrate.

A fifth aspect of the present invention is an exposure apparatus whichexposes a substrate with an image of a pattern, and includes: a holdingmember which holds a circular cylinder-shaped mask which has a patternformation surface on which the pattern is formed and which is placedaround a predetermined axis; and a mask driving apparatus which is ableto move the holding member which is holding the mask in directions ofsix degrees of freedom.

According to the fifth aspect of the present invention, it is possibleto suppress any deterioration in throughput and form a superior image ofa pattern on a substrate.

A sixth aspect of the present invention is an exposure apparatus whichexposes a substrate with an image of a pattern, and includes: a maskdriving apparatus which is able to rotate a circular cylinder-shapedmask which has a pattern formation surface on which the pattern isformed and which is placed around the predetermined axis; and acountermass which absorbs reaction force created by a rotation of themask.

According to the sixth aspect of the present invention, it is possibleto suppress any deterioration in throughput and form a superior image ofa pattern on a substrate.

A seventh aspect of the present invention is an exposure apparatus whichexposes a substrate with an image of a pattern, and includes: a holdingmember which holds a circular cylinder-shaped mask which has a patternformation surface on which the pattern is formed and which is placedaround the predetermined axis; a shaft member which rotatably supportsthe holding member with the predetermined axis taken as the axis ofrotation, and which has the holding member placed at one end sidethereof; a support member which rotatably supports the shaft member; anda weight member which is placed at the other end side of the shaftmember, and which has the support member placed between itself and theholding member.

According to the seventh aspect of the present invention, it is possibleto suppress any deterioration in throughput and form a superior image ofa pattern on a substrate.

An eighth aspect of the present invention is a device manufacturingmethod which uses the exposure apparatus according to the abovedescribed aspects.

According to the eighth aspect of the present invention, it is possibleto manufacture a device using an exposure apparatus which makes itpossible to suppress any deterioration in throughput and form a superiorimage of a pattern on a substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic structural view showing an exposure apparatusaccording to a first embodiment.

FIG. 2 is a typical view showing an exposure apparatus EX of the firstembodiment.

FIG. 3 is a perspective view showing a mask according to the firstembodiment.

FIG. 4A is a typical view in order to illustrate the mask according tothe first embodiment, and shows a side surface of a mask.

FIG. 4B is a view in order to illustrate the mask according to the firstembodiment, and shows a pattern formation surface of a mask which hasbeen unrolled along an XY plane.

FIG. 5 is a plan view showing a substrate holding member which isholding the substrate according to the first embodiment.

FIG. 6 is a side cross-sectional view showing the vicinity of a maskholding member and a mask driving apparatus according to the firstembodiment.

FIG. 7A is a cross-sectional view parallel to an XY plane of the maskholding member illustrating the mask holding member according to thefirst embodiment.

FIG. 7B is a view showing the mask holding member according to the firstembodiment as seen from the +X side of the mask holding member.

FIG. 8A is a view in order to illustrate a replacement system thatreplaces the mask according to the first embodiment, and shows a statein which a transporting apparatus is transporting a mask.

FIG. 8B is a view illustrating a replacement system that replaces themask according to the first embodiment, and shows a state in which amask is held on a mask holding member.

FIG. 9 is a typical view in order to illustrate a first detection systemwhich is able to acquire position information about the mask accordingto the first embodiment.

FIG. 10A is a typical view in order to illustrate a mark formation areaof the mask according to the first embodiment, and shows a portion of apattern formation surface of a mask which has been unrolled along an XYplane.

FIG. 10B is a typical view in order to illustrate a mark formation areaof the mask according to the first embodiment, and is an enlarged viewof a part of the mark formation area shown in FIG. 10A.

FIG. 11 is a typical view showing an example of an encoder systemaccording to the first embodiment.

FIG. 12 is a view showing unrolled along an XY plane the vicinity of amask pattern formation surface on which are formed rotation startposition marks according to the first embodiment.

FIG. 13 is a typical view in order to illustrate a second detectionsystem which is able to acquire position information about the substrateaccording to the first embodiment.

FIG. 14 is a flowchart in order to illustrate an example of an exposuremethod according to the first embodiment.

FIG. 15 is a typical view in order to illustrate an example of anoperation of an exposure apparatus according to the first embodiment.

FIG. 16 is a typical view in order to illustrate an example of anoperation of an exposure apparatus according to the first embodiment.

FIG. 17 is a typical view in order to illustrate an example of anoperation of an exposure apparatus according to the first embodiment.

FIG. 18 is a flowchart showing an example of a process to manufacture amicro device.

DESCRIPTION OF EMBODIMENTS

Embodiments of the present invention will now be described withreference made to the drawings, however, the present invention is notlimited to these embodiments. Note that, in the description given below,an XYZ rectangular coordinate system is set, and the positionalrelationships of the respective members are described while makingreference to this XYZ rectangular coordinate system. A predetermineddirection within a horizontal plane is taken as the X axial direction, adirection which is orthogonal to the X axial direction within thehorizontal plane is taken as the Y axial direction, and a directionwhich is orthogonal (namely, a vertical direction) relative to both theX axial direction and the Y axial direction is taken as the Z axialdirection. In addition, rotation (i.e., tilt) directions around the Xaxis, the Y axis, and the Z axis are taken respectively as the θX, θY,and θZ directions.

First Embodiment

The first embodiment will now be described. FIG. 1 is a schematicstructural view showing an exposure apparatus EX according to the firstembodiment. In FIG. 1, the exposure apparatus EX is provided with a maskholding member 1 which holds a mask M having a pattern MP, a maskdriving apparatus 2 which is able to move the mask holding member 1which is holding the mask M, a substrate holding member 3 which holds asubstrate P, a substrate driving apparatus 4 which is able to move thesubstrate holding member 3 which is holding the substrate P, a detectionsystem 5 which is able to acquire position information for the mask Mand position information for the substrate P, an illumination system ILwhich illuminates the pattern MP on the mask M by means of an exposurelight EL, a projection optical system PL which projects an image of thepattern MP on the mask M which has been illuminated by the exposurelight EL onto the substrate P, and a control apparatus 6 which controlsthe overall operation of the exposure apparatus EX.

The mask M includes a reticle on which is formed a device pattern whichis projected onto the substrate P. In the present embodiment, the mask Mhas a circular cylinder shape. The circular cylinder-shaped mask M has acenter axis J, an outer circumferential surface MF which is placedaround the center axis J, and side surfaces MS which are placed on bothsides of the outer circumferential surface MF. In the presentembodiment, the pattern MP is formed on the outer circumferentialsurface MF of the mask M. In the present embodiment, a plurality of thepatterns MP are formed extending in the circumferential direction of theouter circumferential surface MF of the mask M. A pattern formation areaMA on which the patterns MP are formed is set on the outercircumferential surface MF of the mask M so as to extend in thecircumferential direction of the outer circumferential surface MF. Inthe description given below, at least a portion of the outercircumferential surface MF of the mask M where the patterns MP areformed and which is placed around the center axis J is suitably referredto as the pattern formation surface MF. Moreover, in the presentembodiment, a reflective type of mask is used for the mask M.

The substrate P is obtained, for example, by forming a film of aphotosensitive material (i.e., photoresist) on a substrate such as asemiconductor wafer or the like such as a silicon wafer. Additionally,various types of film such as a protective film (i.e., a top coat film)may be coated onto the photosensitive material. In the presentembodiment, the substrate P has a substantially circular plate shape.The substrate P is held on the substrate holding member 3 such that asurface of the substrate P (i.e., an exposure surface) is substantiallyparallel with an XY plane. The substrate P which is being held on thesubstrate holding member 3 is substantially circular within the XYplane. A plurality of shot areas S (S1 through S26) which are areas forexposure where images of the patterns MP are formed are provided in amatrix layout on the substrate P.

In the present embodiment, the mask driving apparatus 2 includes anactuator such as, for example, a voice coil motor or a linear motorwhich is able to be driven by means of Lorentz's force, so that the maskholding member 1 which is holding a mask M is able to move in directionsof the six degrees of freedom, namely, the X axial direction, the Yaxial direction, the Z axial direction, and the θX, θY, and θZdirections.

Moreover, in the present embodiment, the substrate driving apparatus 4includes an actuator such as, for example, a voice coil motor or alinear motor which is able to be driven by means of Lorentz's force, sothat the substrate holding member 3 which is holding a substrate P isable to move in directions of the six degrees of freedom, namely, the Xaxial direction, the Y axial direction, the Z axial direction, and theθX, θY, and θZ directions.

In the present embodiment, the detection system 5 includes a firstdetection system 5A which is able to acquire position information forthe mask M, and, consequently, position information relating to thepatterns MP (i.e., the pattern formation area MA), and a seconddetection system 5B which is able to acquire position information forthe substrate P, and, consequently, position information for the shotareas S. The first detection system 5A includes an encoder system 51,and a focus and leveling detection system 52. The second detectionsystem 5B includes a laser interferometer system 53, a focus andleveling detection system 54, and an alignment system 55.

In the present embodiment, the first detection system 5A which includesthe encoder system 51 and the focus and leveling detection system 52 isable to acquire position information for the mask M (i.e., the patternMP) in the directions of the six degrees of freedom, namely, the X axialdirection, the Y axial direction, the Z axial direction, and the θX, θY,and θZ directions.

Moreover, in the present embodiment, the second detection system 5Bwhich includes the laser interferometer system 53, the focus andleveling detection system 54, and the alignment system 55 is able toacquire position information for the substrate P (i.e., the shot areas5) in the directions of the six degrees of freedom, namely, the X axialdirection, the Y axial direction, the Z axial direction, and the θX, θY,and θZ directions.

The exposure apparatus EX is provided with a body BD which includes afirst column CL1 which is provided, for example, on a floor FL inside aclean room, and with a second column CL2 which is provided on top of thefirst column CL1. The first column CL1 is provided with a plurality offirst supporting pillars 11, and with a first base plate 7 which issupported on these first supporting pillars 11 via an anti-vibrationapparatus 10. The second column CL2 is provided with a plurality ofsecond supporting pillars 12 which are provided on top of the first baseplate 7, and with a second supporting plate 8 which is supported onthese second supporting pillars 12 via an anti-vibration apparatus 13.

The illumination system IL illuminates the pattern formation surface MFof the mask M where the pattern MP is formed by means of exposure lightEL. The illumination system IL is able to set a predeterminedillumination area IA on top of the pattern formation surface MF of themask M, and is able to irradiate the exposure light EL at a uniformirradiation distribution onto this illumination area IA. Theillumination system IL has an optical integrator to render uniform theilluminance of the exposure light EL emitted from a light sourceapparatus, a condenser lens to condense the exposure light EL from theoptical integrator, a relay lens system, a field stop (a blindmechanism) to set the illumination region IA, and similar. As theexposure light EL emitted from the illumination system IL, for example,emission lines emitted from a mercury lamp (the g line, h line, i line),as well as KrF excimer laser light (wavelength 248 nm) and otherdeep-ultraviolet (DUV) light, as well as ArF excimer laser light(wavelength 193 nm), F2 laser light (wavelength 157 nm), and othervacuum ultraviolet (VUV) light is used. In this embodiment, ArF excimerlaser light is used.

The mask holding member 1 holds the circular cylinder-shaped mask Mwhich has the pattern formation surface MF on which the patterns MP areformed and which is formed around the center axis J. The mask drivingapparatus 2 is able to drive the mask holding member 1 which is holdingthe mask M in directions of the six degrees of freedom, namely, the Xaxial direction, the Y axial direction, the Z axial direction, and theθX, θY, and θZ directions. At least a portion of the mask holding member1 and the mask driving apparatus 2 which is capable of moving this maskholding member 1 is supported on a top surface of the second base plate8. The mask holding member 1 is able to move in the directions of thesix degrees of freedom over the second base plate 8 while holding themask M.

The second base plate 8 has an aperture 8K which allows the exposurelight EL to pass through. The exposure light EL which has been emittedfrom the illumination system IL and has illuminated the patternformation surface MF of the mask M is reflected by the pattern formationsurface MF of the mask M, and then passes through the aperture 8K of thesecond base plate 8, and is then irradiated into the projection opticalsystem PL.

In the present embodiment, the mask holding member 1 holds the mask Msuch that the center axis J of the mask M and the X axis aresubstantially parallel with each other. Accordingly, when the mask M isbeing held on the mask holding member 1, the pattern formation surfaceMF of the mask M is placed around an axis which is substantiallyparallel with the X axis. The mask driving apparatus 2 is able to rotatethe mask holding member 1 which is holding the mask M in the θXdirection taking the center axis J as the axis of rotation, and is alsoable to move the mask holding member 1 which is holding the mask M inthe directions of the six degrees of freedom. The mask M which is beingheld on the mask holding member 1 is able to be rotated by the maskdriving apparatus 2 in at least the θX direction with the center axis Jtaken as the axis of rotation.

The first detection system 5A of the detection system 5 includes anencoder system 51 which is able to acquire at least one of positioninformation for the pattern MP of the mask M in the circumferentialdirection (i.e., the θX direction) of the pattern formation surface MF,and position information for the patterns MP of the mask M in thedirection of the center axis J (i.e., the X direction), and a focus andleveling detection system 52 which is able to acquire positioninformation for the pattern formation surface ME of the mask M in adirection which is perpendicular to the center axis J (i.e., the Z axialdirection). The control apparatus 6 drives the mask driving apparatus 2based on detection results from the first detection system 5A whichincludes the encoder system 51 and the focus and leveling detectionsystem 52 in order to control the position of the mask M being held onthe mask holding member 1.

The projection optical system PL projects images of the patterns MP onthe mask M onto the substrate P at a predetermined projection ratio β.The projection optical system PL has a plurality of optical elements,and these optical elements are held by a lens barrel 15. The lens barrel15 has a flange 15F, and the projection optical system PL is supportedon the first base plate 7 via the flange 15F. Moreover, ananti-vibration apparatus can be provided between the first base plate 7and the lens barrel 15. The projection optical system PL of the presentembodiment is a reducing system whose projection ratio is, for example,1/4, 1/5, 1/8, or the like. The projection optical system PL of thepresent embodiment projects inverted images of the patterns MP on themask M onto the substrate P.

Note that the projection optical system PL may be any one of a reducingsystem, an equal system, and an enlarging system. The projection opticalsystem PL may also form either one of an inverted image and an erectimage. In addition, the projection optical system PL may be any one of arefractive system which does not include reflective optical elements, areflective system which does not include refractive optical elements,and a reflective-refractive system which includes both reflectiveoptical elements and refractive optical elements.

The substrate holding member 3 holds the circular plate-shaped substrateP which is coated with a film formed from a photosensitive material. Thesubstrate holding member 3 has a suctioning mechanism which holds thesubstrate P by suction. In the present embodiment, a recessed portion 3Cis formed in the substrate holding member 3. At least a portion of thesuctioning mechanism which holds the substrate P by suction, as well asa holding surface which holds a rear surface of the substrate P areplaced inside this recessed portion 3C. The top surface 3F of thesubstrate holding member 3 other than this recessed portion 3C is formedas a flat surface which has substantially the same height (i.e., isflush with) as the surface of the substrate P which is being held on theholding surface (i.e., by the suctioning mechanism).

The substrate driving apparatus 4 is able to move the substrate holdingmember 3 which is holding the substrate P in the directions of the sixdegrees of freedom, namely, the X axial direction, the Y axialdirection, the Z axial direction, and the θX, θY, and θZ directions. Thesubstrate holding member 3 and at least a portion of the substratedriving apparatus 4 which is able to move this substrate holding member3 are supported on a top surface of a third base plate 9. The third baseplate 9 is supported on the floor surface FL via an anti-vibrationapparatus 14. The substrate holding member 3 is able to move in thedirections of the six degrees of freedom on the third base plate 9 whileholding the substrate P.

In the present embodiment, the substrate holding member 3 holds thesubstrate P such that a surface (i.e., an exposure surface) of thesubstrate P is substantially parallel with the XY plane. The substratedriving apparatus 4 is able to move the substrate holding member 3 whichis holding the substrate P in at least a predetermined one-dimensionaldirection. The substrate P which is being held on the substrate holdingmember 3 is able to be moved in at least the predeterminedone-dimensional direction by the substrate driving apparatus 4.

The second detection system 5B of the detection system 5 includes alaser interferometer system 53 which is able to acquire positioninformation in the X axial, the Y axial, and the θZ directions for thesubstrate holding member 3 which is holding the substrate P (and,consequently, for the substrate P), and a focus and leveling detectionsystem 54 which is able to acquire surface position information in the Xaxial, the Y axial, and the θY directions for the surface of thesubstrate P which is being held on the substrate holding member 3. Thecontrol apparatus 6 controls the position of the substrate P which isbeing held on the substrate holding member 3 by driving the substratedriving apparatus 4 based on detection results from the second detectionsystem 5B which includes the laser interferometer system 53 and thefocus and leveling detection system 54.

Moreover, in the present embodiment, the exposure apparatus EX isprovided with an off-axis alignment system 55 which detects alignmentmarks AM and the like which are formed on the substrate P. At least aportion of the alignment system 55 is located in the vicinity of adistal end of the projection optical system PL. The alignment system 55of the present embodiment employs an FIA (Field Image Alignment)alignment system such as that disclosed in, for example, Japanese PatentApplication Publication No. H04-65603 A (corresponding to U.S. Pat. No.5,493,403). In this system, broadband detection light that does notphotosensitize the photosensitive material on the substrate P isirradiated onto subject marks (i.e., the alignment marks AM or the likewhich are formed on the substrate P), and an image of the subject markswhich is formed on the light receiving surface by reflected light fromthe subject marks, and an image of an index (i.e., index marks on anindex plate provided in the alignment system 55) are picked up using animage pickup device such as a CCD or the like. Image processing is thenperformed on these picked up image signals, thereby enabling thepositions of the marks to be measured.

FIG. 2 is a typical view showing the exposure apparatus EX of thepresent embodiment. The exposure apparatus EX of the present embodimentis a scanning type of exposure apparatus (what is known as a scanningstepper) which projects an image of the patterns MP on the mask M ontothe substrate P while moving the mask M and the substrate P insynchronization in their respective predetermined scanning directions.In the present embodiment, the scanning direction (i.e., thesynchronized movement direction) of the substrate P is taken as the Yaxial direction, while the scanning direction (i.e., the synchronizedmovement direction) of the mask M is taken as the θX direction.

The exposure apparatus EX projects onto the substrate P an image of thepatterns MP on the mask M via the projection optical system PL whilemoving the substrate P in the Y axial direction in synchronization withthe movement (i.e., the rotation) of the mask M in the θX directionusing both the mask driving apparatus 2 and the substrate drivingapparatus 4. The exposure apparatus EX moves the shot areas S on thesubstrate P in the Y axial direction relative to the projection area ARof the projection optical system PL, and in synchronization with thismovement of the substrate P in the Y axial direction, illuminates theillumination area IA with the exposure light EL while moving (i.e.,rotating) the pattern formation surface ME of the mask M in the θXdirection, with the center axis J taken as the axis of rotation,relative to the illumination area IA of the illumination system IL. Theexposure apparatus EX then irradiates the exposure light EL onto theprojection area AR via the projection optical system PL. As a result,the shot areas S on the substrate P are exposed with images of thepatterns MP which is formed on the projection area AR.

As is described above, in the present embodiment, the projection opticalsystem PL projects inverted images of the patterns MP on the mask M ontothe substrate P. When the images of the patterns MP on the mask M arebeing projected onto the shot areas S on the substrate P, as is shown bythe arrow in FIG. 2, the control apparatus 6, for example, rotates themask M in a direction from the Y axis towards the Z axis (i.e., in ananti-clockwise rotation when the mask M is viewed from the +X direction)in synchronization with the movement of the substrate P in the −Ydirection. In the description given below, a rotation direction from theY axis towards the Z axis (i.e., an anticlockwise rotation when the maskM is viewed from the +X direction) is referred to where appropriate as a+θX direction, while the opposite direction to this is referred to whereappropriate as the −θX direction.

As is shown in FIG. 2, in the present embodiment, the illuminationsystem IL is provided with a reflective optical element 18 which islocated between the mask M and the projection optical system PL.Moreover, in the present embodiment, the illumination system IL isplaced on the light source apparatus side relative to the reflectiveoptical element 18, and is provided with a first cylindrical lens 17which guides the exposure light EL to the reflective optical element 18,and a second cylindrical lens 19 which is entered by the exposure lightEL that has been guided by the first cylindrical lens 17 to thereflective optical element 18 and has been reflected by this reflectiveoptical element 18, and that guides this exposure light EL to thepattern formation surface MF of the mask M.

The first cylindrical lens 17 corrects the cross-sectional configurationof the exposure light EL which has been set by the field diaphragm orthe like of the illumination system IL. The reflective optical element18 reflects the exposure light EL from the first cylindrical lens 17,and thereby changes the orientation of the optical path of the exposurelight EL. The second cylindrical lens 19 corrects the cross-sectionalconfiguration of the exposure light EL from the reflective opticalelement 18.

In the present embodiment, the illumination system IL which includes thefirst cylindrical lens 17 and the second cylindrical lens 19 sets theillumination area IA on the pattern formation surface MF of the mask Min a slit shape (i.e., a rectangular shape) which has the X axialdirection as the longitudinal direction thereof. Moreover, in thepresent embodiment, the illumination system IL illuminates a bottommostportion BT of the pattern formation surface MF of the circularcylinder-shaped mask M using the exposure light EL.

As has been described above, in the present embodiment, a reflectivetype of mask is used for the mask M. The exposure light EL which isirradiated onto the pattern formation surface MF by the illuminationsystem IL and is then reflected by this pattern formation surface MF isirradiated via the projection optical system PL onto the substrate P.The images of the patterns MP on the mask M are formed via theprojection optical system PL on the substrate P. In order to project theimages of the patterns MP on the mask M onto the substrate P and therebyexpose this substrate P, the control apparatus 6 irradiates the exposurelight EL onto the pattern formation surface MF of the mask M using theillumination system IL while rotating the mask M, with the center axis Jtaken as the axis of rotation, using the mask driving apparatus 2.

Next, the mask M will be described. FIG. 3 is a perspective view showingthe mask M, FIG. 4A is a typical view of the pattern formation surfaceMF of the mask M, and FIG. 4B is a view showing the pattern formationsurface MF of the mask M unrolled along the XY plane.

As is shown in FIG. 3, the mask M has a circular cylinder shape. Themask M has a pattern formation surface MF which is positioned around thecenter axis J, and on which the patterns MP are formed. In FIG. 3, thecenter axis J is parallel to the X axis. The mask M is able to berotated in the θX direction with the center axis J taken as the axis ofrotation by the driving of the mask driving apparatus 2.

The circular cylinder-shaped mask M is provided with an internal spaceMK, and with an aperture MKa which is formed on both sides (i.e., on the+X side and on the −X side) of the internal space MK so as to connectthis internal space MK with the external space. The circularcylinder-shaped mask M has side surfaces MS on both sides of the patternformation surface MF. The side surfaces MS of the mask M have asubstantially toroidal shape within a YZ plane, and are positioned so asto encircle the aperture MKa. In FIG. 3, the side surfaces MS of themask M are substantially parallel with the YZ plane. In the presentembodiment, because the mask M has a hollow structure in which theinternal space MK is provided, it is possible to achieve a reduction inthe weight of the mask M.

A plurality of the patterns MP are formed extending in thecircumferential direction on the pattern formation surface MF. Aplurality of pattern formation areas MA on which the patterns MP areformed are provided on the pattern formation surface MF of the mask Mextending in the circumferential direction of this pattern formationsurface MF. The patterns MP which are to be projected onto the substrateP are formed on each one of this plurality of pattern formation areasMA.

When the pattern formation surface MF is unrolled along the XY plane,the shape of the patterns MP formed on this pattern formation surface MFis similar to the shape of the image of the patterns MP which are formedon the substrate P via the projection optical system PL. In the presentembodiment, as an example, patterns MP having the shape of the letter Fare formed on the pattern formation area MA.

Moreover, as is shown in FIG. 4B, in the present embodiment, theillumination area IA of the illumination system IL is provided in a slitshape which has the X axial direction as the longitudinal directionthereof.

The mask M is made up of a circular cylinder-shaped substrate which isformed from a glass material such as quartz or the like, or from aceramic (i.e., a low expansion ceramic) or the like on which thepredetermined patterns MP are formed using a metal film made of, forexample, chrome (Cr) or the like.

Furthermore, in the present embodiment, mark formation areas MB, onwhich are formed marks which are detected by the detection system 5, areprovided on the outer side of the pattern formation area MA of the outercircumferential surface MF of the mask M at both one end side (i.e., the+X side) and another end side (i.e., the −X side) in the direction ofthe center axis J (i.e., the X axial direction). Note that, in order tomake the drawings more easily understandable, the marks are not shown inFIG. 3 and FIGS. 4A and 4B.

As is shown in FIG. 3, the mask M is provided with a pellicle 100 whichis formed in a circular cylinder shape so as to cover the patternformation surface MF, and with support members (i.e., pellicle frames)101 which support the pellicle 100. The support members 101 are formedextending in the circumferential direction of the pattern formationsurface (i.e., the outer circumferential surface) MF so as to encirclethe center axis J, and are formed in predetermined areas on the outerside of the mark formation areas MB on both the one end side and theother end side in the direction of the center axis J (i.e., in the Xaxial direction) of the pattern formation surface (i.e., the outercircumferential surface) MF of the mask M. The pellicle 100 which issupported by the support members 101, and the pattern formation surfaceMF of the mask M are separated from each other.

In the present embodiment, the support members 101 are toroidal members.The support members 101 are formed from a material having pliability(i.e., flexibility) such as, for example, polytetrafluoroethylene, andare able to perfectly connect to the pattern formation surface MF, whichis a curved surface. The support members 101 are connected to thepattern formation surface MF of the mask M in predetermined areas on theouter side of the mark formation areas MB on both the one end side andthe other end side in the direction of the center axis 3 (i.e., in the Xaxial direction) of the pattern formation surface MF of the mask M.

In the present embodiment, because the pellicle 100 is provided so as tocover the pattern formation surface MF, it is possible to substantiallyprevent any foreign matter becoming adhered to the pattern formationsurface MF, and to thereby protect the pattern formation surface MF.

FIG. 5 is a plan view of the substrate holding member 3. As is shown inFIG. 5, the plurality of shot areas S (S1 through S26) which are areasto be exposed are provided in a matrix layout on the substrate P, andthe plurality of alignment marks AM are provided so as to correspond tothe respective shot areas S1 through S26. Moreover, as is shown in FIG.5, in the present embodiment, the projection area AR of the projectionoptical system PL is set so as to be slit-shaped with the X axialdirection taken as the longitudinal direction thereof. The substrate Palso has a substantially circular shape within the XY plane.

When exposing each of the shot areas S1 through S26 on the substrate P,the control apparatus 6 irradiates the exposure light EL onto thesubstrate P by, for example, irradiating the exposure light EL onto theprojection area AR while moving the projection area AR of the projectionoptical system PL relatively to the substrate P as is shown by the arrowy1 in FIG. 5. The control apparatus 6 controls the operations of thesubstrate holding member 3 using the substrate driving apparatus 4 suchthat the projection area AR moves in the direction of the arrow y1relative to the substrate P.

The reference mark FM which is detected by the above described alignmentsystem 55 is formed at a predetermined position on the top surface ofthe substrate holding member 3. In addition, an aperture 56K is formedat a predetermined position relative to the reference mark FM on the topsurface of the substrate holding member 3 which can be placed on theimage plane side (i.e., the light emitting surface side) of theprojection optical system PL. At least a portion of a light receivingdevice 56 which is able to receive light via the projection opticalsystem PL and the aperture 56K is positioned below (i.e., in the −Zdirection) this aperture portion 56K. In the present embodiment, thelight receiving device 56 includes a spatial image measuring instrumentsuch as that disclosed in, for example, Japanese Patent ApplicationPublication No. 2002-14005 A (corresponding to U.S. Patent ApplicationPublication No. 2002/0041377 A).

In the present embodiment, if the diameter of the mask M on the patternformation surface MF is taken as D, if the maximum length of thesubstrate P in the scanning direction of the substrate P (i.e., the Yaxial direction in the present embodiment) is taken as L, if theprojection ratio of the projection optical system PL is taken as β, andif the circumference ratio is taken as π, then the conditions for thefollowing formula are satisfied.D≧(β×L)/π  (1)In the present embodiment, the diameter D of the mask M on the patternformation surface MF is determined in accordance with the maximum lengthL of the substrate P and with the projection ratio β of the projectionoptical system PL in order that the conditions for Formula (1) aresatisfied.

Here, as is described above, in the present embodiment, the substrate Pis substantially circular within the XY plane. In the presentembodiment, the maximum length L of the substrate P in the scanningdirection of the substrate P (i.e., in the Y axial direction) is thediameter of the substrate P.

Moreover, as is shown in FIG. 5, a plurality of the shot areas S ontowhich the images of the patterns MP of the mask M are projected areprovided on the substrate P extending in at least the scanning directionof the substrate P (i.e., in the Y axial direction). In addition, thenumber of patterns MP of the mask M which are formed extending in thecircumferential direction on the pattern formation surface MF is equalto the maximum number of shot areas S extending in at least the scanningdirection of the substrate P (i.e., in the Y axial direction).

In the present embodiment, as is shown in FIG. 5, four shot areas S1through S4 are provided in the Y axial direction, then six shot areas S5through S10 are provided in the Y axial direction, then six shot areasS11 through S16 are provided in the Y axial direction, then six shotareas S17 through S22 are provided in the Y axial direction, then fourshot areas S23 through S26 are provided in the Y axial direction.Accordingly, in the present embodiment, the maximum number of shot areasS in the Y axial direction is six. The number of pattern formation areasMA where the patterns MP of the mask M are formed extending in thecircumferential direction of the pattern formation surface MF is six.

Next, the mask holding member 1 and the mask driving apparatus 2 will bedescribed. FIG. 6 is a side cross-sectional view showing the vicinity ofthe mask holding member 1 and the mask driving apparatus 2. In FIG. 6,the exposure apparatus EX is provided with the mask holding member 1which holds the mask M, and with the mask driving apparatus 2 which isable to move the mask holding member 1 when it is holding the mask M. Atleast a portion of the mask holding member 1 and the mask drivingapparatus 2 is provided on a second base plate 8.

The exposure apparatus EX is provided with a shaft member 20 whichsupports the mask holding member 1 which is holding the mask M such thatthe mask holding member 1 is able to rotate with the center axis J takenas the axis of rotation, and with a support member 21 which rotatablysupports the shaft member 20. The support member 21 is a substantiallycylinder-shaped member.

The mask holding member 1 has a hole 16 that is used to position atleast a portion of the shaft member 20. The hole 16 has an aperture 16Kaon at least the −X side. In the present embodiment, the hole 16 isformed so as to penetrate a portion of the mask holding member 1 in theX axial direction, and apertures 16Ka and 16Kb are formed respectivelyon both sides (i.e., on the +X side and the −X side) of the hole 16.

The mask holding member 1 is positioned on one end side (i.e., on the +Xside) of the shaft member 20. The exposure apparatus EX has a weightmember 22 which is positioned on the other end side (i.e., on the −Xside) of the shaft member 20. The weight member 22 is connected to theother end of the shaft member 20. The shaft member 20 and the weightmember 22 are an integral body. The support member 21 which rotatablysupports the shaft member 20 is positioned between the mask holdingmember 1 and the weight member 22. The support member 21 is supported ona top surface of a base member 23. The support member 21 is connected tothe top surface of the base member 23. The support member 21 and thebase member 23 are an integral body. The base member 23 which supportsthe support member 21 is supported on the top surface of the second baseplate 8 via an anti-vibration apparatus 24. The anti-vibration apparatus24 is able to suppress vibrations which arise as a result of themovement of the mask holding member 1. The anti-vibration apparatus 24includes an actuator which can be driven by Lorentz's force, and with adamper mechanism such as an air mount.

The mask holding member 1 removably holds a side surface MS of thecircular cylinder-shaped mask M which has the pattern formation surfaceMF which is positioned around the center axis J and on which thepatterns MP are formed. The mask holding member 1 has a suctioningmechanism 25 which is able to suction the side surface MS of the mask M.

The mask holding member 1 is provided with a holding surface 26 which ispositioned so as to face the side surface MS on the −X side of the maskM, and which removably holds this side surface MS on the −X side of themask M. The suctioning mechanism 25 is able to suction the side surfaceMS of the mask M onto the holding surface 26. The holding surface 26 ofthe mask holding member 1 includes a first surface 27A of a basematerial 27 (described below), end surfaces of pin members 29, an endsurface of a first circumferential wall member 30, and an end surface ofa second circumferential wall member 31.

FIG. 7A and FIG. 7B show the mask holding member 1. FIG. 7A is across-sectional view parallel with the XZ plane of the mask holdingmember 1, while FIG. 7B is a view as seen from the +X side of the maskholding member 1. The mask holding member 1 is provided with the basematerial 27, the pin members 29 which are formed on the base material 27and which are able to support the side surface MS of the mask M, a firstcircumferential wall member 30 which is formed on the base material 27and which is able to face the outer edge area of the side surface MS ofthe mask M, a second circumferential wall member 31 which is formed onthe base material 27 and which is able to face an inner edge area (i.e.,an area in the vicinity of the aperture MKa) of the side surface MS ofthe mask M, and suction apertures 32 which are formed in the basematerial 27 and are able to suction vapor.

The base material 27 of the mask holding member 1 has shape whichcorresponds to the mask M. As is described above, in the presentembodiment, the side surfaces MS of the mask M are substantiallytoroidal within the YZ plane. A first surface 27A of the base material27 which is able to face a side surface MS of the mask M is formed in asubstantially toroidal shape within the YZ plane so as to face the sidesurface MS of the mask M. In the present embodiment, the first surface27A of the base material 27 faces towards the +X side. The holdingsurface 26 is located on the first surface 27A side of the base material27.

Moreover, in the present embodiment, the mask holding member 1 has aprotruding portion 28 which is formed such that it protrudes on the +Xside from the holding surface 26. The protruding portion 28 is connectedto a central portion within the YZ plane of the base material 27. Thehole 16 which is used to position the shaft member 20 is formed suchthat it penetrates the base material 27 and the protruding portion 28 inthe X axial direction. At least a portion of the protruding portion 28is able to be positioned in the internal space MK of the mask M which isheld on the holding surface 26.

The first circumferential wall member 30 is formed on an outer edge areaof the first surface 27A of the base material 27. The firstcircumferential wall member 30 is formed in a substantially toroidalshape which corresponds to the outer configuration of the side surfaceMS of the mask M. The first circumferential wall member 30 has an outerdiameter which is slightly smaller than the outer diameter of the sidesurface MS of the mask M. The first circumferential wall member 30 hasan end surface which is able to face the outer edge area of the sidesurface MS of the mask M which is held on the mask holding member 1. Theend surface of the first circumferential wall member 30 is flat and hasa predetermined width.

The second circumferential wall member 31 is formed on an inner edgearea of the first surface 27A of the base material 27. The secondcircumferential wall member 31 is formed in a substantially toroidalshape which corresponds to the aperture MKa of the side surface MS ofthe mask M. The second circumferential wall member 31 has an outerdiameter which is slightly larger than the outer diameter of theaperture MKa which is encircled by the side surface MS of the mask M.The second circumferential wall member 31 has an end surface which isable to face the inner edge area of the side surface MS of the mask Mwhich is held on the mask holding member 1. The end surface of thesecond circumferential wall member 31 is flat and has a predeterminedwidth.

A plurality of the pin members 29 are formed on the first surface 27A ofthe base material 27. The first circumferential wall member 30 ispositioned so as to encircle the second circumferential wall member 31,and the plurality of pin members 29 are positioned uniformly on thefirst surface 27A of the base material 27 between the firstcircumferential wall member 30 and the second circumferential wallmember 31. Each of the pin members 29 has an end surface which is ableto face the side surface MS of the mask M. The end surfaces of the pinmembers 29 are flat. Each of the end surfaces of the plurality of pinmembers 29 is provided in substantially the same position in the X axialdirection.

In the present embodiment, the end surfaces of the pin members 29, theend surface of the first circumferential wall member 30, and the endsurface of the second circumferential wall member 31 are provided insubstantially the same position in the X axial direction. Namely, theend surfaces of the plurality of pin members 29, the end surface of thefirst circumferential wall member 30, and the end surface of the secondcircumferential wall member 31 are positioned on substantially the sameplane (i.e., on the YZ plane), so as to be mutually flush with eachother. The end surfaces of the pin members 29, the end surface of thefirst circumferential wall member 30, and the end surface of the secondcircumferential wall member 31 are able to come into contact with theside surface MS of the mask M. As is shown in FIG. 6, as a result ofeach of the end surfaces of the pin members 29, the end surface of thefirst circumferential wall member 30, and the end surface of the secondcircumferential wall member 31 being placed in contact with the sidesurface MS of the mask M, a space 33 is formed on the −X side of themask M which is enclosed by the side surface MS of the mask M, the firstcircumferential wall member 30, the second circumferential wall member31, and the base material 27.

The suction apertures 32 hold the mask M using suction. The suctionapertures 32 are formed respectively in a plurality of predeterminedpositions in the first surface 27A of the base material 27 between thefirst circumferential wall member 30 and the second circumferential wallmember 31. The suction apertures 32 are each provided in a plurality ofpredetermined positions on the first surface 27A of the base material 27which are different from the positions of the pin members 29.

The suctioning mechanism 25 which is able to suction the side surface MSof the mask M includes the suction apertures 32 which are formed in thefirst surface 27A of the base material 27, and a suctioning apparatus 34which includes a vacuum system or the like which is able to suction avapor via the suction apertures 32. As is shown in FIG. 7A, thesuctioning apparatus 34 is provided externally of the mask holdingmember 1, and each of the suction apertures 32 is connected via a flowpath 35 to the suctioning apparatus 34. At least a portion of the flowpath 35 which connects each of the suction apertures 32 with thesuctioning apparatus 34 is formed inside the base material 27.

The suctioning apparatus 34 is able to place the space 33 which isenclosed by the side surface MS of the mask M, the first circumferentialwall member 30, the second circumferential wall member 31, and the basematerial 27 in a state of negative pressure. Namely, by suctioning thevapor in the space 33 via the suction apertures 32, the suctioningapparatus 34 is able to lower the pressure inside the space 33 to belowthe pressure of the space outside the space 33 (for example, atmosphericpressure). In the present embodiment, the mask holding member 1 has thepin members 29, and accordingly has what is known as a pin chuckmechanism.

The control apparatus 6 drives the suctioning apparatus 34 of thesuctioning mechanism 25 so as to suction the vapor inside the space 33and place this space 33 in negative pressure. As a result, the mask M isheld using suction by the holding surface 26 which includes the endsurfaces of the pin members 29, the end surface of the firstcircumferential wall member 30, and the end surface of the secondcircumferential wall member 31.

Moreover, the control apparatus 6 controls the suctioning mechanism 25which includes the suctioning apparatus 34 so that the suctioning of themask M by the suctioning mechanism 25 is canceled. As a result, the maskM can be removed from the holding surface 26.

In this manner, in the present embodiment, as a result of the controlapparatus 6 controlling the suctioning mechanism 25 which is provided inthe mask holding member 1, it is possible to mount the mask M on theholding surface 26 of the mask holding member 1, and to also remove themask M from the holding surface 26 of the mask holding member 1.

Note that in the present embodiment, the suctioning mechanism 25 isprovided with a vacuum suctioning mechanism which vacuum suctions themask M, however, it is also possible for it to be provided with anelectrostatic holding mechanism which uses electrostatic force. The maskholding member 1 is still able to removably hold the mask M even if anelectrostatic holding mechanism is used.

As is shown in FIG. 6, at least a portion of the shaft member 20 can bepositioned in the hole (i.e., in the internal space) 16 in the maskholding member 1. The end of the shaft member 20 on the +X side ispositioned further on the +X side than the holding surface 26 of themask holding member 1. Moreover, the outer surface of the shaft member20 faces the inner surface of the hole 16 of the mask holding member 1(i.e., the protruding portion 28). Of the mask holding member 1, atleast a portion of the shaft member 20 and the mask holding member 1(i.e., the protruding portion 28) which are positioned on the +X side ofthe holding surface 26 are able to be placed inside the internal spaceMK of the mask M which is held on the holding surface 26.

Moreover, in the present embodiment, the mask M which is held on theholding surface 26 of the mask holding member 1 is separated from themask holding member 1 (i.e., the protruding portion 28) and the shaftmember 20 which are positioned inside the internal space MK of this maskM.

As is shown in FIG. 6, the exposure apparatus EX has first gas bearings36 which are formed between the mask holding member 1 and the shaftmember 20, and with second gas bearings 37 and third gas bearings 38which are formed between the shaft member 20 and the support member 21.

As is described above, the mask holding member 1 which includes theprotruding portion 28 has an inner surface which faces the outer surfaceof the shaft member 20. The hole 16 has a circular shape within an XYplane. At least that portion of the shaft member 20 which is positionedon the inner side of the hole 16 also has a circular shape within an XYplane. The outer diameter of that portion of the shaft member 20 whichis positioned on the inner side of the hole 16 is slightly smaller thanthe inner diameter of the hole 16. A predetermined gap (i.e., a firstgap) G1 is formed between the inner surface of the mask holding member 1and the outer surface of the shaft member 20.

The first gas bearings 36 are formed between the inner surface of themask holding member 1 and the outer surface of the shaft member 20. Themask holding member 1 is supported without being in contact with theshaft member 20 by the first gas bearings 36. The gap (i.e., the firstgap) G1 between the inner surface of the mask holding member 1 and theouter surface of the shaft member 20 is kept substantially constant bythe first gas bearings 36. The shaft member 20 supports the mask holdingmember 1 such that it is able to rotate with the center axis J taken asthe axis of rotation.

In the present embodiment, the first gap G1 is kept substantiallyconstant by the first gas bearings 36, so that movement of the maskholding member 1 relative to the shaft member 20 in the Y axialdirection, the Z axial direction, the θY direction, and the θZ directionis restricted. The mask holding member 1 is only able to move relativeto the shaft member 20 in the X axial direction and the θX direction.

The support member 21 is a substantially cylinder-shaped member. Thesupport member 21 has a hole (i.e., an internal space) 39 in which atleast a portion of the shaft member 20 can be placed. The hole 39 isformed so as to penetrate the support member 21 in the X axialdirection. At least a portion of the shaft member 20 is positioned onthe inner side of the hole 39 in the cylindrical support member 21.

The support member 21 has an inner surface which faces the outer surfaceof the shaft member 20. The hole 39 has a circular shape within an XYplane. At least that portion of the shaft member 20 which is positionedon the inner side of the hole 39 also has a circular shape within an XYplane. The outer diameter of that portion of the shaft member 20 whichis positioned on the inner side of the hole 39 is slightly smaller thanthe inner diameter of the hole 39. A predetermined gap (i.e., a secondgap) G2 is formed between the inner surface of the support member 21 andthe outer surface of the shaft member 20.

The second gas bearings 37 are formed between the inner surface of thesupport member 21 and the outer surface of the shaft member 20. Theshaft member 20 is supported without being in contact with the supportmember 21 by the second gas bearings 37. The gap (i.e., the second gap)G2 between the inner surface of the support member 21 and the outersurface of the shaft member 20 is kept substantially constant by thesecond gas bearings 37. The support member 21 supports the shaft member20 such that it is able to rotate with the center axis J taken as theaxis of rotation.

The support member 21 has a first side surface 21A which faces the +Xside, and a second side surface 21B which faces the −X side. Both thefirst side surface 21A and the second side surface 21B are flat. Theshaft member 20 has a first flange 41 which has a facing surface 41Awhich faces the first side surface 21A on the +X side of the supportmember 21, and a second flange 42 which has a facing surface 42A whichfaces the second side surface 21B on the −X side of the support member21. Each of the first side surface 21A, the second side surface 21B, thefacing surface 41A, and the facing surface 42A are substantiallyparallel within a YZ plane. The distance in the X axial directionbetween the first side surface 21A and the second side surface 21B isslightly smaller than the distance in the X axial direction between thefacing surface 41A of the first flange 41 and the facing surface 42A ofthe second flange 42. A predetermined gap (i.e., a third gap) G3 isformed between the first side surface 21A and the facing surface 41A,and a predetermined gap (i.e., a fourth gap) G4 is formed between thesecond side surface 21B and the facing surface 42A.

The third gas bearings 38 are formed respectively between the first sidesurface 21A of the support member 21 and the facing surface 41A of theflange 41, and between the second side surface 21B of the support member21 and the facing surface 42A of the second flange 42. The gap (i.e.,the third gap) G3 between the first side surface 21A of the supportmember 21 and the facing surface 41A of the first flange 41, and alsothe gap (i.e., the fourth gap) G4 between the second side surface 21B ofthe support member 21 and the facing surface 42A of the second flange 42are kept substantially constant by the third gas bearings 38.

In the present embodiment, the second gap G2, the third gap G3, and thefourth gap G4 are each kept substantially constant by the second gasbearings 37 and the third gas bearings 38. In the present embodiment,movement of the shaft member 20 relative to the support member 21 in theX axial direction, the Y axial direction, the Z axial direction, the θYdirection, and the θZ direction is restricted by the second gas bearings37 and the third gas bearings 38. The shaft member 20 is only able tomove (i.e., is only able to rotate) relative to the support member 21 inthe θX direction.

As is described above, in the present embodiment, the exposure apparatusEX is provided with a mask driving apparatus 2 which is able to rotatethe mask holding member 1 which is holding the mask M in the θXdirection taking the center axis J as the axis of rotation, and which isable to move the mask holding member 1 which is holding the mask M inthe directions of the six degrees of freedom. The mask driving apparatus2 includes a first driving mechanism 61 which is able to move the maskholding member 1 in at least a rotation direction (i.e., the θXdirection), and with a second driving mechanism 62 which is able to movethe shaft member 20 in a predetermined direction.

The first driving mechanism 61 has a rotor 61A which is mounted on themask holding member 1 side and a stator 61B which is mounted on theshaft member 20 side, and moves the mask holding member 1 in at least arotation direction (i.e., the θX direction). The first driving mechanism61 includes a rotation motor which can be driven by means of Lorentz'sforce. In the present embodiment, the rotor 61A of the first drivingmechanism 61 has a magnet unit, while the stator 61B has a coil unit.

In the present embodiment, the rotor 61A is mounted on a second surface27B of the base material 27 of the mask holding member 1. The secondsurface 27B of the base material 27 is on the opposite side from thefirst surface 27A and faces the −X side. Moreover, in the presentembodiment, the shaft member 20 has a third flange 43 which has a facingsurface 43A which faces the second surface 27B of the base material 27,and the stator 61B is mounted on the facing surface 43A of the thirdflange 43. Both the second surface 27B and the facing surface 43A aresubstantially parallel with a YZ plane. A predetermined gap (i.e., afifth gap) G5 is formed between the second surface 27B and the facingsurface 43A.

The stator 61B includes a plurality of coils (i.e., a coil array) whichare arranged on the facing surface 43A so as to surround the center axisJ. The rotor 61A includes a plurality of magnets (i.e., a magnet array)which are arranged on the second surface 27B surrounding the centershaft J such that the polarities thereof in the same direction as thecoil array direction are alternately different.

The control apparatus 6 supplies sinusoidal three-phase alternatingcurrent to the plurality of coils of the stator 61B. As a result ofthis, thrust force is generated in the coil array direction, namely, ina rotational direction (i.e., the θX direction) around the center axisJ. By switching the coil to which the three-phase current is supplied inaccordance with the relative positions of the coil array and the magnetarray, the control apparatus 6 is able to continuously change therelative positions of the coil array and the magnet array in the coilarray direction. As a result of the magnetic field which is formed bythe magnet array of the rotor 61A changing in a sinusoidal shape in thecoil array direction and in the coil array cycle, fixed thrust force isgenerated in the coil array direction when three-phase alternatingcurrent is applied to the coil array.

By controlling the first driving mechanism 61 which includes the rotor61A and the stator 61B, the control apparatus 6 is able to rotate themask holding member 1 in a rotational direction (i.e., the θX direction)around the center axis J. Moreover, by controlling the first drivingmechanism 61, the control apparatus 6 is able to adjust the distance inthe X axial direction between the rotor 61A and the stator 61B. Byadjusting the power which is supplied to the coil of the stator 61B, forexample, the control apparatus 6 is able to adjust the gap (i.e., thefifth gap) G5 in the X axial direction between the facing surface 43A ofthe third flange 43 of the shaft member 20 and the second surface 27B ofthe base material 27 of the mask holding member 1.

Namely, by controlling the first driving mechanism 61, the controlapparatus 6 is able to move the mask holding member 1 (i.e., the basematerial 27) in the X axial direction relative to the shaft member 20(i.e., the third flange 43), and is thereby able to adjust the positionof the mask holding member 1 relative to the shaft member 20 in the Xaxial direction.

In this manner, in the present embodiment, the first driving mechanism61 of the mask driving apparatus 2 is able to move the mask holdingmember 1 which is holding the mask M in a rotational direction (i.e., inthe θX direction) around the center axis J, and is also able to move itin the direction of the center axis J (i.e., in the X axial direction).

The second driving mechanism 62 has rotors 62A which are mounted on thebase member 23 (i.e., the support member 21) side and stators 62B whichare mounted on the second base plate 8 side, and are capable of movingthe base member 23 and the support member 21 which is integral with thebase member 23 in a predetermined direction. The second drivingmechanism 62 includes a voice coil motor which can be driven by means ofLorentz's force. In the present embodiment, the rotors 62A of the seconddriving mechanism 62 have a magnet unit, while the stators 62B have acoil unit.

In the present embodiment, the rotors 62A are mounted respectively at aplurality of predetermined positions on the base member 23. The stators62B are mounted respectively at a plurality of predetermined positionson the second base plate 8 so as to correspond to the rotors 62A. In thepresent embodiment, the rotors 62A are mounted respectively in at leastsix locations on the base member 23, while the stators 62B are mountedin at least six locations on the second base plate 8 so as to correspondto each of the rotors 62A. Note that, in FIG. 6, two each of both therotors 62A and the stators 62B which correspond to these rotors 62A areshown in the drawing, and the remaining rotors 62A and stators 62B havebeen omitted.

By controlling the second driving mechanism 62 which includes theplurality of stators 62A and rotors 62B, the control apparatus 6 is ableto move the base member 23 and the support member 21 which is integralwith the base member 23 in the directions of the six degrees of freedom,namely, the X axial direction, the Y axial direction, the Z axialdirection, and the θX, the θY, and the θZ directions.

Moreover, as is described above, the shaft member 20 is only able tomove (i.e., is only able to rotate) in the θX direction relative to thesupport member 21. Movement of the shaft member 20 in the X axialdirection, the Y axial direction, the Z axial direction, and the θY andθZ directions relative to the support member 21 is restricted by thesecond gas bearings 37 and the third gas bearings 38. Accordingly, inconjunction with the movement of the base member 23 and the supportmember 21 in the X axial direction, the Y axial direction, the Z axialdirection, and the θY, and θZ directions, the shaft member 20 also movesin the X axial direction, the Y axial direction, the Z axial direction,and the θY, and θZ directions. In other words, the shaft member 20 andthe support member 21 (i.e., the base member 23) move in conjunctionwith each other in the X axial direction, the Y axial direction, the Zaxial direction, and the θY, and θZ directions.

By moving the support member 21 in a predetermined direction, the seconddriving mechanism 62 is able to move the support member 21 in thepredetermined direction together with the shaft member 20. Accordingly,by controlling the second driving mechanism 62 such that it moves thesupport member 21, the control apparatus 6 is able to move the shaftmember 20 together with the support member 21 in all directions otherthan the X direction, namely, in the X axial direction, the Y axialdirection, the Z axial direction, and the θY, and θZ directions.

Moreover, as is described above, the mask holding member 1 is only ableto move in the X axial direction and the θX direction relative to theshaft member 20. Movement of the mask holding member 1 in the Y axialdirection, the Z axial direction, and the θY and θZ directions relativeto the shaft member 20 is restricted by the first gas bearings 36.Accordingly, in conjunction with the movement of the shaft member 20 inthe Y axial direction, the Z axial direction, and the θY and θZdirections, the mask holding member 1 also moves in the Y axialdirection, the Z axial direction, and the θY and θZ directions. In otherwords, the mask holding member 1 and the shaft member 20 move togetherwith each other in the Y axial direction, the Z axial direction, and theθY and θZ directions.

Accordingly, as a result of the second driving mechanism 62 moving thesupport member 21 together with the shaft member 20 in the Y axialdirection, the Z axial direction, and the θY and θZ directions, it isalso able to move the mask holding member 1 together with the shaftmember 20 in the Y axial direction, the Z axial direction, and the θYand θZ directions. Moreover, by moving the support member 21 togetherwith the shaft member 20 using the second driving mechanism 62 whileadjusting the fifth gap G5 (for example, maintaining this gap at a fixedvalue) using the first driving mechanism 61, the control apparatus 6 isable to move the mask holding member 1 and the shaft member 20 togetherwith each other in the X axial direction, the Y axial direction, and theZ axial direction, and in the θY and θZ directions.

In addition, by controlling the mask driving apparatus 2 which includesthe first driving mechanism 61 and the second driving mechanism 62, thecontrol apparatus 6 is able to move the mask holding member 1 which isholding the mask M in the directions of the six degrees of freedom,namely, in the X axial direction, the Y axial direction, and the Z axialdirection, and in the θX, the θY, and the θZ directions. By controllingthe mask driving apparatus 2, the control apparatus 6 is able to adjustthe position of the mask holding member 1 in the directions of the sixdegrees of freedom, and is therefore able to adjust the position in thedirections of the six degrees of freedom of the mask M which is held onthe mask holding member 1, and consequently of the patterns MP.

In the present embodiment, the mask driving apparatus 2 has a magnetunit and a coil unit which is driven by Lorentz's force, and the coilunit and magnet unit are driven in a state of non-contact with eachother. As a result, it is possible to suppress the generation of anyvibration which is caused by the mask driving apparatus 2 which isdriving the mask holding member 1.

Moreover, in the present embodiment, the exposure apparatus EX isprovided with the anti-vibration apparatus 24 which suppresses vibrationwhich is created due to the movement of the mask holding member 1.Vibration which is created by the movement of the mask holding member 1is suppressed by the anti-vibration apparatus 24. In the presentembodiment, the anti-vibration apparatus 24 includes at least a portionof the second driving mechanism 62 which has an actuator which is ableto be driven by Lorentz's force, and includes a damper structure such asan air mount or the like. As is described above, the second drivingmechanism 62 is provided with a plurality of actuators which are able toadjust the position of the base member 23 (i.e., the support member 21)in the directions of the six degrees of freedom. By driving the actuatorbased on detection results from an acceleration sensor (not shown) (orfrom a displacement sensor), it is possible to suppress any vibrationwhich is created by the movement in a predetermined direction (i.e., oneof the directions of the six degrees of freedom) of the mask holdingmember 1. For example, the control apparatus 6 detects the rate ofacceleration (or the displacement) of the second base plate 8 using anacceleration sensor (or a displacement sensor), and based on thedetection results, controls the anti-vibration apparatus 24 such thatvibration of the second base plate 8 which is created by the movement ofthe mask holding member 1 is suppressed. As a result, the controlapparatus 6 is able to suppress excitation of the natural frequencies ofthe body BD, the projection optical system PL, and the like, and therebysuppress vibration.

Moreover, in the present embodiment, the anti-vibration apparatus 24includes a countermass 46 which absorbs reaction force from the inertiaforce which is created by the rotation in the θX direction of the maskholding member 1. In the present embodiment, the countermass 46 includesthe shaft member 20 and the weight member 22 which is connected to theshaft member 20. This weight member 22 has a function of maintaining theweight balance when the mask M is held on the mask holding member 1.

The countermass 46 which includes the shaft member 20 is rotated in theopposite direction from that of the mask M, in accordance with the lawof conservation of momentum, due to the reaction force of the inertiaforce which is created by the rotation of the mask M. For example, whenthe mask holding member 1 which is holding the mask M is rotated in the+θX direction by the driving of the first driving mechanism 61 of themask driving apparatus 2, the countermass 46 which includes the shaftmember 20 which is in a non-contact state with the mask holding member 1is rotated in the −θX direction. As a result, it is possible to suppressvibration which is excited when the mask holding member 1 and the mask Mare rotated.

For example, when the first driving mechanism 61 is driven in order torotate the mask holding member 1 which is holding the mask M, thecountermass 46 rotates in the opposite direction from the rotationdirection of the mask M and the mask holding member 1 by an amountobtained by dividing the imparted impulse by the mass of the countermass46. The reaction force created by the driving in order to move (i.e.,rotate) the mask holding member 1 holding the mask M, or by the drivingin order to maintain the attitude of the mask holding member 1 holdingthe mask M after it has been moved (i.e., after it has been rotated) iscounterbalanced by the movement (i.e., the rotation) of this countermass46. Vibration which is generated as a result of the mask holding member1 which is holding the mask M being rotated is absorbed by the action ofthe countermass 46, and it is possible to restrict this vibration beingtransmitted to the second base plate 8.

Note that in the present embodiment, driving force is generated by thephysical interaction (i.e., electromagnetic interaction) between therotor 61A and the stator 61B of the first driving mechanism 61, anddrive force is generated as a result of the rotor 61A and the stator 61Bbeing excited. In the present embodiment, the stator 61B is movedslightly in the opposite direction from the rotor 61A by Lorentz's force(i.e., electromagnetic force). In the present embodiment, the memberhaving the greater amount of relative movement is referred to as therotor, while the member having the lesser amount of relative movement isreferred to as the stator.

Moreover, in the present embodiment, the exposure apparatus EX isprovided with a holding mechanism 47 which holds the countermass 46 suchthat it is able to be displaced by a predetermined amount. The holdingmechanism 47 holds the countermass 46 such that it can be displaced(such i.e., such that it can be rotated) by a predetermined amount, andsuppresses any rotation of the countermass 46 which is greater than thispredetermined amount. Moreover, the holding mechanism 47 which includesan actuator is able to adjust the position of the countermass 46.

In the present embodiment, the holding mechanism 47 includes an actuatorsuch as a voice coil motor which can be driven by means of Lorentz'sforce. Specifically, the holding mechanism 47 has a rotor 47A whichincludes a magnet unit which is mounted on the shaft member 20 side, anda stator 47B which includes a coil unit which is mounted on the secondbase plate 8 side. The holding mechanism 47 includes what is known as atrim motor.

In the present embodiment, the shaft member 20 has a fourth flange 44which is formed between the second flange 42 and the weight member 22.The rotor 47A is mounted on a bottom surface of the fourth flange 44facing the top surface of the second base plate 8. The stator 47B ismounted on a predetermined position on the top surface of the secondbase plate 8 so as to face the rotor 47A. The holding mechanism 47 whichincludes the voice coil motor having the rotor 47A and the stator 47B isable to move (i.e., is able to rotate) the countermass 46 which includesthe shaft member 20 in the θX direction. Namely, when electricity issupplied to the coil unit of the stator 47B, drive force in the θXdirection acts on the rotor 47A which is mounted on the fourth flange44.

As is described above, the countermass 46 is moved (i.e., is rotated) inthe θX direction in the opposite direction from the mask holding member1 by the reaction force created by the rotation of the mask holdingmember 1 holding the mask M. Here, for example, depending on thescanning exposure conditions, there is a possibility that the maskholding member 1 will continue to move solely in the +θX direction. Inthis case, there is a possibility that the countermass 46 will rotateconsiderably in the −θX direction from a reference position (i.e., aninitial position or an intermediate position), and that this positionwill be considerably offset.

If the position in the θX direction of the shaft member 20 of thecountermass 46 is considerably offset, then there is a possibility thatthis will have an adverse effect on controllability such as, forexample, a deterioration in the controllability of the actuator (i.e.,the voice coil motor) of the first driving mechanism 61 which is mountedon a portion of this shaft member 20.

Therefore, when the countermass 46 is rotated by greater than apredetermined amount from a reference position, in other words, when therelative positions in the X direction of the countermass 46 and thesupport member 21 (or alternatively, the holding member 1) are offset bymore than an allowable value, the control apparatus 6 drives the voicecoil motor of the holding mechanism 47, and adjusts (i.e., corrects) theposition in the θX direction of the countermass 46 which includes theshaft member 20 such that, for example, it is restored to the referenceposition. Here, the driving of the voice coil motor of the holdingmechanism 47 can be executed at predetermined timings outside anexposure operation such as, for example, when a substrate is beingreplaced, or after a first shot area has been exposed and before thesubsequent second shot area is exposed.

Moreover, in the present embodiment, the holding mechanism 47 generatesdrive force and gently holds the countermass 46 such that thecountermass 46 can be displaced by a predetermined amount even during ascanning exposure operation (i.e., even when the mask holding member 1is being rotated by the first driving mechanism 61). In other words,even when the mask holding member 1 is being rotated by the firstdriving mechanism 61, the holding mechanism 47 generates drive force sothat the countermass 46 is gently held within a range that enables anyrotation of the countermass 46 greater than a predetermined amount to besuppressed.

If the holding mechanism 47 is not provided, and the countermass 46rotates freely in the θX direction, then there is a possibility that itwill no longer be possible to perform superior thrust control in the θXdirection of the mask holding member 1 using the actuator of the firstdriving mechanism 61.

Therefore, in the present embodiment, even during a scanning operation(i.e., when the mask holding member 1 is being rotated by the firstdriving mechanism 61), as a result of the holding mechanism 47 gentlyholding the countermass 46 within a range that allows the countermass 46to be displaced by a predetermined amount, the above described failuresare prevented from occurring.

When scanning exposure commences, or during a calibration operation orthe like, there are cases in which an operator wishes to place theposition in the θX direction of the countermass 46 which includes theshaft member 20 at a reference position. In cases such as these, thecontrol apparatus 6 is able to adjust the position in the θX directionof the countermass 46 using the actuator of the holding mechanism 47.

Next, a description will be given of a replacement system 64 whichreplaces the mask M. FIGS. 8A and 8B show the replacement system 64which replaces the mask M. In FIGS. 8A and 8B, the exposure apparatus EXis provided with the replacement system 64 which replaces the mask M onthe mask holding member 1. As is described above, the mask holdingmember 1 removably holds the mask M, and the control apparatus 6 is ableto replace the mask M on the mask holding member 1 using the replacementsystem 64.

The replacement system 64 is provided on the mask holding member 1, andincludes the suctioning mechanism 25 which removably suctions the mask Monto the holding surface 26, and a transport apparatus 65 whichtransports the mask M between the mask holding member 1 and apredetermined position (for example, a housing apparatus which iscapable of housing the mask M).

In the present embodiment, the transporting apparatus 65 is providedwith an arm member 66 which has a holding surface which uses suction tohold the side surface MS of the mask M on the +X side, which is on theopposite side from the side surface MS on the −X side which faces theholding surface 26 of the mask holding member 1. The transportingapparatus 65 is able to move while holding the side surface MS of themask M using the armed member 66.

FIG. 8A shows a state in which the transporting apparatus 65 has mountedthe mask M on the mask holding member 1 (i.e., shows a loaded state). Asis shown in FIG. 8A, using the arm member 66, the transporting apparatus65 loads (i.e., transports) the mask M onto the mask holding member 1while holding the side surface MS on the +X side of the mask M, so thatthe mask M is inserted from one end side (i.e., the +X side) of theshaft member 20 onto the shaft member 20 and onto the protruding portion28 of mask holding member 1. As is shown in FIG. 8B, the mask holdingmember 1 holds the side surface MS on the −X side of the mask M by meansof the holding surface 26 using suction. After the mask holding member 1is holding the mask M, the arm member 66 of the transporting apparatus65 is withdrawn from the mask M which is now held on the mask holdingmember 1.

Moreover, when the mask M which is being held on the mask holding member1 is unloaded (i.e., transported away) from the mask holding member 1,the armed member 66 of the transporting apparatus 65 approaches the sidesurface MS on the +X side of the mask M which is being held on the maskholding member 1 from the one end side (i.e., the +X side) of the shaftmember 20, and holds the side surface MS on the +X side of the mask Musing suction. When the arm member 66 holds the mask M, the holding ofthe mask. M by the mask holding member 1 is released. The arm member 66of the transporting apparatus 65 moves to the +X side while holding themask M such that the mask M is withdrawn from the shaft member 20 andfrom the protruding portion 28 of the mask holding member 1. As aresult, the mask M is removed from the mask holding member 1 by thetransporting apparatus 65.

In this manner, the replacement system 64 which includes thetransporting apparatus 65 and the suctioning mechanism 25 is able toperform at least one of transporting the mask M onto the mask holdingmember 1 and transporting the mask M away from the mask holding member 1from the direction of the one end side (i.e., the +X side) of the shaftmember 20 such that the mask M can be inserted onto or be withdrawn fromat least a portion of the shaft member 20 and the mask holding member 1.

Next, a description will be given of the first detection system 5A whichis capable of acquiring position information for the mask M. FIG. 9 is atypical view illustrating the first detection system 5A. The firstdetection system 5A detects light via the mask M, and based on thesedetection results, is able to acquire position information for the maskM, and, consequently, position information relating to the patterns MP.In the present embodiment, the first detection system 5A includes anencoder system 51, and a focus and leveling detection system 52. Thefirst detection system 5A which includes the encoder system 51 and thefocus and leveling detection system 52 is able to acquire positioninformation for the mask M (i.e., the patterns MP) in the directions ofthe six degrees of freedom, namely, the X axial direction, the Y axialdirection, the Z axial direction, and the θX, θY, and θZ directions.

The encoder system 51 is able to acquire at least one of positioninformation for the patterns MP of the mask M in the circumferentialdirection of the outer circumferential surface (i.e., the patternformation surface) MF, and position information for the patterns MP ofthe mask M in the direction of the center axis J (i.e., in the X axialdirection). The encoder system 51 is able to detect the rotation amount(i.e., the angle of rotation) of the mask M. The focus and levelingdetection system 52 is able to acquire at least position information forthe pattern formation surface MS of the mask M in a direction which isperpendicular to the center axis J (i.e., in the Z axial direction).

The encoder system 51 of the first detection system 5A detects light inmark formation areas MB of the outer circumferential surface MF viaposition detection marks which are formed in a predetermined positionalrelationship relative to the patterns MP, and based on these detectionresults, acquires position information relating to the patterns MP. Theencoder system 51 includes an optical encoder.

FIG. 10A shows a portion of the outer circumferential surface of themask M unrolled along an XY plane, while FIG. 10B is an enlarged view ofa portion of a mark formation area MB shown in FIG. 10A. As is shown inFIGS. 10A and 10B, the mask M is provided with marks EM and RM which areformed in predetermined positional relationships relative to thepatterns MP in the mark formation areas MB of the outer circumferentialsurface MF, and which are used to acquire position in formation relatingto the patterns MP.

The mark formation areas MB are placed on the outer side of the patternformation area MA on both the one end side (i.e., the +Z side) and theother end side (i.e., the −X side) in the direction of the center axis J(i.e., in the X axial direction) of the outer circumferential surface MFof the mask M. The pattern formation area MA where the patterns MP areformed is placed continuously in the circumferential direction of theouter circumferential surface MF so as to encircle the center axis J.The mark formation areas MB are placed continuously in thecircumferential direction of the outer circumferential surface MF so asto encircle the center axis J, and so as to correspond to the patternformation areas MA.

The marks which are formed in the mark formation areas MB includeposition detection marks EM which are detected by the encoder system 51,and alignment marks RM which are detected by the light receiving device56 which is placed on the image plane side (i.e., the light emittingsurface side) of the projection optical system PL. In the presentembodiment, the detection system 5 includes the light receiving device56.

The position detection marks EM which are detected by the encoder system51 are marks that are used in order to acquire at least one of positioninformation for the patterns MP in the circumferential direction (i.e.,in the θX direction) of the outer circumferential surface MF, andposition information for the patterns MP in the direction of the centeraxis J (i.e., in the X axial direction). The control apparatus 6 detectslight via the position detection marks EM using the encoder system 51,and is able to acquire at least one of position information for thepatterns MP in the circumferential direction of the outercircumferential surface MF, and position information for the patterns MPin the direction of the center axis J.

The alignment marks RM which are detected by the light receiving device56 are marks which are used to acquire information relating to thepositional relationship between images of the patterns MP obtained viathe projection optical system PL, and the shot areas S on the substrateP which is placed on the image plane side (i.e., on the light emittingsurface side) of the projection optical system PL. The control apparatus6 detects light via the alignment marks RM using the light receivingdevice 56, and is able to acquire information relating to the positionalrelationship between the images of the patterns MP and the shot areas S.

The position detection marks EM which are detected by the encoder system51 are formed continuously in the circumferential direction on the outercircumferential surface MF. The alignment marks RM which are detected bythe light receiving device 56 are formed intermittently in thecircumferential direction on the outer circumferential surface MF. Aplurality of both the marks EM and the marks RM are formed respectively.The marks EM and the marks RM are formed so as to correspondrespectively to the plurality of patterns MP.

The position detection marks EM which are detected by the encoder system51 include a line pattern (i.e., a line and space pattern) of which aplurality are formed extending in a predetermined direction. As is shownin FIG. 10B, the position detection marks EM include a plurality of linepatterns whose longitudinal direction is the X axial direction and whichare arranged at a predetermined pitch in the circumferential direction(i.e., the θX direction) of the outer circumferential surface MF, and aplurality of line patterns whose longitudinal direction is the θXdirection (i.e., the Y axial direction in the unrolled state shown inFIGS. 10A and 10B) and which are arranged at a predetermined pitch inthe X axial direction. These line patterns function as a scale (i.e., adiffraction grating) which is detected by the encoder system 15.

In the description given below, the mark group (i.e., the line group)which includes the plurality of line patterns whose longitudinaldirection is the X axial direction and which are arranged at apredetermined pitch in the circumferential direction (i.e., the θXdirection) of the outer circumferential surface MF are referred to whereappropriate as the first marks EM1, while the mark group (i.e., the linegroup) which includes the plurality of line patterns whose longitudinaldirection is the θX direction and which are arranged at a predeterminedpitch in the X axial direction are referred to where appropriate as thesecond marks EM2.

The first marks EM1 include a plurality of line patterns which arearranged at a predetermined pitch in the circumferential direction ofthe outer circumferential surface MF so as to encircle the center axisJ. The second marks EM2 include a plurality of line patterns which arearranged at a predetermined pitch in the X axial direction and whichextend in the circumferential direction of the outer circumferentialsurface MF so as to encircle the center axis J. The first marks EM1 andthe second marks EM2 are each formed in the two mark formation areas MBon both sides of the pattern formation area MA.

As is shown in FIG. 9, the encoder systems 51 are positioned so as tocorrespond to each of the first marks EM1 and the second marks EM2. Inthe present embodiment, the encoder systems 51 are provided with a firstencoder 51A which detects the second marks EM2 on the mark formationarea MB on the +X side, a second encoder 51B which detects the firstmarks EM1 on the mark formation area on the +X side, a third encoder 51Cwhich detects the first marks EM1 on the mark formation area on the −Xside, and a fourth encoder 51D which detects the second marks EM2 on themark formation area MB on the −X side. These first, second, third, andfourth encoders 51A, 51B, 51C, and 51D are optical encoders.

Both the first encoder 51A and the fourth encoder 51D are able to detectposition information for the mask M in the direction of the center axisJ (i.e., in the X axial direction), and consequently, positioninformation for the patterns MP by detecting the second marks EM2. Boththe second encoder 51B and the third encoder 51C are able to detectposition information for the mask M in the circumferential direction ofthe outer circumferential surface MF (i.e., in the θX direction) bydetecting the first marks EM1.

Detection results from the first, second, third, and fourth encoders51A, 51B, 51C, and 51D are output to the control apparatus 6. Based onthe detection results from the respective encoders 51A, 51B, 51C, and51D, the control apparatus 6 is able to acquire position information forthe patterns MP of the mask M. In the present embodiment, the controlapparatus 6 is able to acquire position information in the X axialdirection of the patterns MP when the outer circumferential surface MFhas been unrolled along an XY plane based on detection results from atleast one of the first encoder 51A and the fourth encoder 51D. Moreover,the control apparatus 6 is able to acquire position information in the Yaxial direction (namely, in the circumferential direction of the outercircumferential surface MF) for the patterns MP when the outercircumferential surface MF has been unrolled along an XY plane based ondetection results from at least one of the second encoder 51B and thethird encoder 51C. In addition, the control apparatus 6 is able toacquire position information in the θZ direction for the patterns MPwhen the outer circumferential surface MF has been unrolled along an XYplane based on detection results from both the second encoder 51B andthe third encoder 51C.

FIG. 11 is a typical view showing the second encoder 51B. The secondencoder 51B is provided with a light projection device 501 whichprojects detection light onto the mark formation areas MB where thefirst marks EM1 are formed, and with a light receiving device 502 whichis capable of receiving detection light that has been projected onto themask formation areas MB of the mask M via these mask formation areas MBof the mask M. In the present embodiment, the second encoder 51B employsthe light receiving device 502 in order to receive detection light whichhas been projected from the light projection device 501 onto the markformation areas MB, and has then been reflected by this mark formationareas MB. The second encoder 51B projects laser light onto the firstmarks EM1 (i.e., a diffraction grating) using the light projectiondevice 501, and detects the first marks EM1 by means of an interferencephenomenon which uses this laser light.

Each line pattern of the first marks EM1 is formed at a predeterminedpitch, and when the mask M is rotated, the line portions and thenon-line portions are formed alternatingly on the irradiation area ofthe detection light which is projected from the light projection device501, so that the light receiving state of the light receiving device 502changes. As a result, based on the light reception results from thelight receiving device 502, the second encoder 51B is able to determinethe position in the rotation direction (i.e., the rotation amount andthe rotation angle) of the mask M.

A plurality of light emitting elements are provided in the lightprojection device 501. By forming the irradiation areas of the detectionlight emitted from each of these light emitting elements atpredetermined intervals (for example, approximately ¼ the pitch of eachline pattern) in the circumferential direction of the mark formationareas MB, and by providing a plurality of light receiving elements inthe light receiving device 502 such that they correspond to therespective light emitting elements (i.e., to the irradiation area), thesecond encoder 51B is able to detect the rotation direction of the maskM based on the light reception results from the respective lightreceiving elements.

The second encoder 51B is also able to detect the rotation speed of themask M based on the number of line patterns which are detected per unittime, and the pitch of the line patterns which is a known value.

Note that, in the description which uses FIG. 11, the second encoder 51Band the first marks EM1 which correspond to this second encoder 51B areused as an example, however, in addition to the second encoder 51B, theother encoders 51A, 51C, and 51D and the respective marks EM1 and EM2which correspond to these encoders 51A, 51C, and 51D have the samestructures.

Moreover, in the present embodiment, in synchronization with themovement of the substrate P in a predetermined one-dimensional direction(i.e., in the Y axial direction), images of the plurality of patterns MPare sequentially formed on the substrate P while the outercircumferential surface MF of the mask M is being rotated with thecenter axis J taken as the axis of rotation. In addition, in the presentembodiment, the mask M is provided with a mark EMS which is used toacquire information relating to the rotation start position when theouter circumferential surface MF rotates in synchronization with themovement of the substrate P. In the description below, the mark EMSwhich is used to acquire information relating to the rotation startposition when the outer circumferential surface MF rotates insynchronization with the movement of the substrate P is referred to whenappropriate as a rotation start position mark EMS.

FIG. 12 shows the vicinity of the outer circumferential surface MF ofthe mask M on which the rotation start position mark EMS is formedunrolled along an XY plane. As is shown in FIG. 12 and FIG. 10B, therotation start position mark EMS is formed on a mark formation area MBof the mask M. The rotation start position mark EMS is formed in onelocation in the circumferential direction of the outer circumferentialsurface MF of the mask M.

As is shown in FIG. 12 and FIG. 9, the encoder system 51 of the firstdetection system 5A is provided with a fifth encoder 51S which detectsthe rotation start position mark EMS. The fifth encoder 51S has the samestructure as the first through fourth encoders 51A through 51D, and isprovided with a light projection device which projects detection lightonto the mark formation areas MB where the rotation start position markEMS is formed, and with a light receiving device which is capable ofreceiving detection light that has been projected onto the maskformation areas MB of the mask M via this mask formation areas MB of themask M.

When the mask M is rotated so that the rotation start position mark islocated on the irradiation area of the detection light which isirradiated from the light projection device of the fifth encoder 51S,the light receiving state of the light receiving device changes. As aresult, based on the light reception result from the light receivingdevice, the fifth encoder 51S is able to detect the rotation startposition of the mask M when the mask M is rotated in synchronizationwith the movement of the substrate P.

In this manner, the first detection system 5A detects detection lightvia the rotation start position mark EMS, and is able to acquireinformation relating to the rotation start position when the mask M isrotated in synchronization with the movement of the substrate P. Basedon the detection results from the first detection system 5A whichincludes the fifth encoder 51, the control apparatus 6 controls the maskdriving apparatus 2 and is able to set the position of the mask M whichis held on the mask holding member 1 to the rotation start position whenthe mask M is rotated in synchronization with the movement of thesubstrate P.

In the present embodiment, the rotation start position mark EMSfunctions as a reference position (i.e., a reference mark) when theencoder system 51 detects the position of the mask M in the rotationdirection.

The focus and leveling detection system 52 of the first detection system5A is able to acquire position information for the pattern formationsurface MF of the mask M in a direction which is perpendicular to thecenter axis J (i.e., in the Z axial direction). The focus and levelingdetection system 52 is able to acquire position information in an areaof the pattern formation surface MF of the mask M where the exposurelight EL is irradiated by the illumination system IL (namely, theillumination area IA). As is described above, in the present embodiment,the bottommost portion BT of the pattern formation surface MF of themask M is illuminated by the exposure light EL, and the focus andleveling detection system 52 acquires position information for thisbottommost portion BT.

In the present embodiment, the focus and leveling detection system 52which is used to acquire position information for the mask M includes agrazing incidence type of focus and leveling detection system. As isshown in FIG. 9, the focus and leveling detection system 52 has a lightprojection device 52A which projects detection light from an obliquedirection onto the pattern formation surface MF of the mask M, and alight receiving device 52B which is capable of receiving detection lightwhich has been projected onto the pattern formation surface MF of themask M and reflected by this pattern formation surface MF of the mask M.

Moreover, in the present embodiment, as is described, for example, inJapanese Patent Application Publication No. H11-045846 A, the focus andleveling detection system 52 has the light projection device 52A whichis capable of projecting a plurality of detection lights (i.e., lightflux), and is able to irradiate detection light onto each one of aplurality of predetermined positions on the pattern formation surface MFof the mask M. In the present embodiment, using the projection opticaldevice 52A, the focus and leveling detection system 52 projectsdetection light onto each one of a plurality of predetermined positionsin the vicinity of the bottommost portion BT of the pattern formationsurface MF of the mask M.

The focus and leveling detection system 52 irradiates detection lightemitted by the light projection device 52A onto the pattern formationsurface MF of the mask M, and detects the detection light from thepattern formation surface MF using the light receiving device 52B. Basedon these detection results, the focus and leveling detection system 52then acquires surface position information for the pattern formationsurface MF.

Detection results (i.e., the light reception results from the lightreceiving device 52B) from the focus and leveling detection system 52are output to the control apparatus 6. The control apparatus 6 is ableto acquire position information for the patterns MP on the mask M (i.e.,position information for the pattern formation surface MF on which thepatterns MP are formed) based on the light reception results from thelight receiving device 52B. In the present embodiment, based on thelight reception results from the light receiving device 52B which hasreceived the detection light irradiated onto the bottommost portion BTof the pattern formation surface MF (or onto the vicinity thereof), thecontrol apparatus 6 is able to acquire position information in the Zaxial direction for the patterns MP when the pattern formation surfaceMF has been unrolled along an XY plane. In addition, based on the lightreception results from the light receiving device 52B which has receivedeach of the plurality of detection lights irradiated onto each of theplurality of predetermined positions of a predetermined area whichincludes the bottommost portion BT of the pattern formation surface MF(or the vicinity thereof), the control apparatus 6 is able to acquireposition information in the θX direction and position information in theθY direction for the patterns MP when the pattern formation surface MFhas been unrolled along an XY plane.

In this manner, in the present embodiment, based on the detectionresults from the encoder system 51, the control apparatus 6 is able toacquire position information in the X axial direction, the Y axialdirection, and the θZ direction for the patterns MP when the patternformation surface MF has been unrolled along an XY plane, and based ondetection results from the focus and leveling detection system 52, thecontrol apparatus 6 is able to acquire position information in the Zaxial direction, and the θX and θY directions for the patterns MP whenthe pattern formation surface MF has been unrolled along an XY plane.Namely, in the present embodiment, the first detection system 5A whichincludes the encoder system 51 and the focus and leveling detectionsystem 52 is able to acquire position information in the directions ofthe six degrees of freedom, namely, the X axial direction, the Y axialdirection, and the Z axial direction, and the θX, θY, and θZ directionsfor the patterns MP.

Next, a description will be given of the substrate holding member 3 andthe substrate driving apparatus 4. FIG. 13 shows the vicinity of thesubstrate holding member 3 and the substrate driving apparatus 4. Thesubstrate driving apparatus 4 is provided with a first drive system 4Hwhich, by moving a base member 4B which is supported in a non-contactstate on the top surface of the third base plate 9 by air bearings inthe X axial direction, the Y axial direction, and the θZ direction ofthis third base plate 9, is able to move the substrate holding member 3which is mounted on this base member 4B in the X axial direction, the Yaxial direction, and the θZ direction, and with a second drive system 4Vwhich is able to move the substrate holding member 3 in the Z axialdirection, the θX direction, and the θY direction relative to the basemember 4B.

The first drive system 4H includes an actuator such as, for example, alinear motor, and is able to drive the base member 4 which is supportedin a non-contact state on the third base plate 9 in the X axialdirection, the Y axial direction, and the θZ direction. The second drivesystem 4V includes an actuator such as, for example, a voice coil motorwhich is provided between the base member 4B and the substrate holdingmember 3, and a measuring device (such as an encoder or the like) (notshown) which measures the drive amount of the respective actuators. Asis shown in FIG. 13, the substrate holding member 3 is supported on thebase member 4B by at least three actuators. Each of these actuators isable to drive the substrate holding member 3 independently in the Zaxial direction relative to the base member 4B. The control apparatus 6drives the substrate holding member 3 in the Z axial direction, and theθX and θY directions relative to the base member 4B by adjusting thedrive amount of each of these three actuators.

In this manner, the substrate driving apparatus 4 which includes thefirst and second drive systems 4H and 4V is able to drive the substrateholding member 3 in the directions of the six degrees of freedom,namely, in the X axial direction, the Y axial direction, and the Z axialdirection, and in the θX, θY, and θZ directions. By controlling thesubstrate driving apparatus 4, the control apparatus 6 is able tocontrol the position in the directions of the six degrees of freedomnamely, the X axial direction, the Y axial direction, and the Z axialdirection, and the θX, θY, and θZ directions of the surface of thesubstrate P which is held on the substrate holding member 3.

Next, a second detection system 5B which is able to acquire positioninformation for the substrate P will be described. In FIG. 13, thesecond detection system 5B includes a laser interferometer system 53which is able to acquire position information relating to the X axialdirection, the Y axial direction, and the θZ direction for the substrateholding member 3 (and consequently for the substrate P) using measuringmirrors which are provided on the substrate holding member 3, and thefocus and leveling detection system 54 which is able to acquire surfaceposition information (i.e., position information for the X axialdirection, and the θX and θY directions) for the surface of thesubstrate P which is being held on the substrate holding member 3. Thefocus and leveling detection system 54 includes a grazing incidence typeof focus and leveling detection system such as that disclosed, forexample, in Japanese Patent Application Publication No. H08-37149 A(corresponding to U.S. Pat. No. 6,327,025), and has a light projectiondevice 54A which projects detection light from an oblique direction ontothe surface of the substrate P, and a light receiving device 54B whichis capable of receiving detection light which has been projected ontothe surface of the substrate P and reflected by this surface of thesubstrate P. Note that the focus and leveling detection system 54 whichis employed may also be one which uses electrostatic capacity sensors.The control apparatus 6 controls the position of the substrate P whichis being held on the substrate holding member 3 by driving the substratedriving apparatus 4 based on detection results from the second detectionsystem 5B which includes the laser interferometer system 53 and thefocus and leveling detection system 54.

In this manner, in the present embodiment, based on detection resultsfrom the laser interferometer system 53, the control apparatus 6 is ableto acquire position information in the X axial direction, the Y axialdirection, and the θZ direction for the surface of the substrate P, andbased on detection results from the focusing and leveling detectionsystem 52, the control apparatus 6 is able to acquire positioninformation in the Z axial direction and the θX and θY directions forsurface of the substrate P. Namely, in the present embodiment, thesecond detection system 5B which includes the laser interferometersystem 53 and the focus and leveling detection system 54 is able toacquire position information in the directions of the six degrees offreedom, namely, in the X axial direction, the Y axial direction, andthe Z axial direction and in the θX, θY, and θZ directions for thesubstrate P.

Next, a method of exposing the substrate P using the exposure apparatusEX having the above described structure will be described using theflowchart shown in FIG. 14, and the typical views shown in FIGS. 15, 16,and 17.

When an exposure sequence is started, and a mask M is loaded onto themask holding member 1, and a substrate P is loaded onto the substrateholding member 3 (i.e., step SA1), the control apparatus 6 startspredetermined measurement processing. For example, the control apparatus6 starts measurement processing for the substrate holding member 3 whichis holding the substrate P.

In the present embodiment, a detection operation which employs thealignment system 55 is included in the measurement processing. Thecontrol apparatus 6 moves the substrate holding member 3 which isholding the substrate P in an XY direction using the substrate drivingapparatus 4, and as is shown in FIG. 15, a reference mark FM is placedon the substrate holding member 3 in the detection area of the alignmentsystem 55. The control apparatus 6 detects the reference mark FM whichis provided on the substrate holding member 3 using the alignment system55, while measuring the position information in the X axial directionand the Y axial direction of the substrate holding member 3 using thelaser interferometer system 53 (step SA2).

As a result, the control apparatus 6 is able to determine positioninformation in the X axial direction and the Y axial direction for thereference mark FM on the substrate holding member 3 within a coordinatesystem which is prescribed by the laser interferometer system 53.

The control apparatus 6 is also able to detect a predetermined pluralityof alignment marks AM which are provided on the substrate P using thealignment system 55, as shown in FIG. 16, while measuring the positioninformation in the X axial direction and the Y axial direction of thesubstrate holding member 3 which is holding the substrate P using thelaser interferometer system 53 (step SA3).

As a result, the control apparatus 6 is able to determine positioninformation in the X axial direction and the Y axial direction for eachof the alignment marks AM within a coordinate system which is prescribedby the laser interferometer system 53.

Based on the position information of the respective alignment marks AMon the substrate P determined in step SA3, the control apparatus 6determines position information for each one of the plurality of shotareas S1 through S26 on the substrate P relative to detection referencepositions of the alignment system 55 using calculation processing (stepSA4). When the respective position information for the plurality of shotareas S1 through S26 on the substrate P is being determined bycalculation processing, then what is known as an EGA (enhanced globalalignment) method such as that disclosed in, for example, JapanesePatent Application Publication No. S61-44429 A is used.

As a result, using the alignment system 55, the control apparatus 6 isable to detect the alignment marks AM on the substrate P, and is able todecide positional coordinates (i.e., array coordinates) for each one ofthe plurality of shot areas S1 through S26 which are provided on thesubstrate P within an XY coordinate system prescribed by the laserinterferometer system 53. Namely, the control apparatus 6 is able toascertain where each of the shot areas S1 through S26 is positioned onthe substrate P relative to a detection reference position of thealignment system 55 within an XY coordinate system prescribed by thelaser interferometer system 53.

The control apparatus 6 detects the position information for the mask Mheld on the mask holding member 1 using the encoder system 51, anddetects an image (i.e., a projection image, a spatial image) of thealignment marks RM provided on the mask M using the light receivingdevice 56 provided on the substrate holding member 3 (step SA5) whilemeasuring position information for the substrate holding member 3 whichis holding the substrate P using the laser interferometer system 53.

Namely, as is shown in FIG. 17, when the control apparatus 6 has madethe projection optical system PL face the aperture 56K in the substrateholding member 3, the alignment marks RM provided on the mask M areilluminated by the exposure light EL. As a result, a spatial image ofthe alignment marks provided on the mask M is projected onto the topsurface 3F of the substrate holding member 3 which includes the aperture56K via the projection optical system PL, and the light receiving device56 provided on the substrate holding member 3 is able to detect thespatial image of the alignment marks RM provided on the mask M.

Accordingly, the control apparatus 6 is able to determine the positionin the X axial direction and the Y axial direction of a spatial image(i.e., a projection image) within a coordinate system prescribed by thelaser interferometer system 53 using the light receiving device 56(i.e., the aperture 56K) provided on the substrate holding member 3.

Moreover, the position information for the mask M when the spatial imageof the alignment marks RM is being measured by the light receivingdevice 56 is detected by the encoder system 51. By detecting theposition detection marks EM (i.e., the first marks EM), the encodersystem 51 detects the position information for the alignment marks RM,and consequently the position information for the patterns MP, taking areference mark (i.e., a rotation start position mark) RMS as areference. Namely, the control apparatus 6 is able to ascertain wherethe respective patterns MP on the mask M are positioned relative to thereference mark (i.e., the rotation start position mark) RMS based ondetection results from the encoder system 51.

The patterns MP on the mask M and the alignment marks RM are formed in apredetermined positional relationship, and the positional relationshipbetween the reference mark FM on the substrate holding member 3 and theaperture 56K (i.e., the light receiving device 56) is also known. Inaddition the detection values from the encoder system 51 of thedetection system 5 are associated with the detection values of the laserinterferometer system 53. Accordingly, based on detection results fromstep SA5, the control apparatus 6 is able to derive a relationshipbetween a predetermined reference position within a coordinate systemprescribed by the laser interferometer system 53 and projected positionsof images of the patterns MP on the mask M (step SA6).

The control apparatus 6 derives relationships between projectedpositions of images of the patterns MP on the mask M within a coordinatesystem prescribed by the laser interferometer system 53 and therespective shot areas S1 through S26 on the substrate P based on thepositional relationship between the predetermined reference positionwithin a coordinate system prescribed by the laser interferometer system53 and the respective shot areas S1 through S26 on the substrate P(i.e., array information for the shot areas S1 through S26 relative tothe predetermined reference position) determined in step SA4, and basedon the relationship between the predetermined reference position withina coordinate system prescribed by the laser interferometer system 53 andthe projected positions of the images on the patterns MP on the mask Mdetermined in step SA6.

In this manner, in the present embodiment, the control apparatus 6detects light via the alignment marks RM on the mask M using the lightreceiving device 56, and is able to acquire information relating to thepositional relationships between the images of the patterns MP on themask M and the shot areas S1 through S26 on the substrate P.

In order to start the exposure of the substrate P, the control apparatus6 moves the substrate P which is being held on the substrate holdingmember 3 to the initial exposure start position using the substratedriving apparatus 4 while measuring the position information of thesubstrate holding member 3 which is holding the substrate P (andconsequently the position information of the shot areas S on thesubstrate P) using the laser interferometer system 53. In the presentembodiment, the control apparatus 6 moves the substrate P which is beingheld on the substrate holding member 3 such that, of the plurality ofshot areas S1 through S26, the first shot area S1 is placed in thevicinity of the −Y side of the projection area AR.

Moreover, in order to start the exposure of the substrate P, the controlapparatus 6 moves the mask M which is being held on the mask holdingmember 1 to the exposure start position (i.e., the rotation startposition) using the mask driving apparatus 2 while measuring theposition information of the mask M which is being held on the maskholding member 1 (and consequently the position information of thepatterns MP on the mask M) using the encoder system 51. The controlapparatus 6 moves (i.e., rotates) the mask M to the rotation startposition when the mask M is to be rotated in synchronization with themovement of the substrate P by detecting detection light which hastransited the rotation start position mark EMS using the fifth encoder51S of the first detection system 5A. In the present embodiment, thecontrol apparatus 6 moves the mask M which is being held on the maskholding member 1 such that, of the plurality of (six) pattern formationareas MA, the first pattern formation area MA is placed in the vicinityof the +Y side of the illumination area IA (step SA8).

Moreover, based on detection results from the focus and levelingdetection system 54, the control apparatus 6 makes adjustments such thatthe surface (i.e., the exposure surface) of the substrate P is placed ina predetermined positional relationship with the image plane of theprojection optical system PL.

Based on detection results from the focus and leveling detection system52, the control apparatus 6 also makes adjustments such that thebottommost portion BT of the mask M is placed in a predeterminedpositional relationship with the substance surface of the projectionoptical system PL. The bottommost portion BT of the mask M is placed inan optically conjugate position with the surface of the substrate P asseen from the projection optical system PL.

The control apparatus 6 controls the substrate driving apparatus 4 so asto start the movement of the substrate P in the +Y direction, andcontrols the mask drive substrate 2 so as to start the movement (i.e.,the rotation) of the mask M in the −θX direction.

When the speed of the movement of the substrate P in the +Y directionand the speed of the rotation (i.e., the angular velocity) of the mask Min the −θX direction are respectively uniform, and the end portion onthe +Y side of the first shot area S1 reaches the projection area AR,the control apparatus 6 irradiates the exposure light EL from theillumination system IL. At the same time as the control apparatus 6 ismoving the substrate P in the +Y direction in synchronization with themovement (i.e., the rotation) of the mask M in the −θX direction usingthe mask driving apparatus 2 and the substrate driving apparatus 4respectively, it also illuminates the patterns MP on the mask M usingthe exposure light EL and thereby projects images of the patterns MP onthe mask M onto the substrate P via the projection optical system PL.The control apparatus 6 illuminates the patterns MP on the mask M usingthe exposure light EL while rotating the mask M with the center axis Jtaken as the axis of rotation.

During scan exposure, when an image of a pattern MP on a portion of themask M is being projected onto the projection area AR, the substrate Pis moved in the +Y direction at the speed β·V (wherein β is theprojection ratio) in synchronization with the pattern MP at thebottommost portion BT of the mask M moving substantially in the −Ydirection at the speed V in the projection optical system PL.

A plurality of the patterns MP are formed extending in thecircumferential direction on the pattern formation surface MF of themask M. The control apparatus 6 moves the shot areas S on the substrateP in the Y axial direction relative to the projection area AR of theprojection optical system PL, and also exposes the shot area S on thesubstrate P using the image of the pattern MP which is formed in theprojection area AR by irradiating the exposure light EL thereon while atthe same time moving (i.e., rotating) the pattern formation surface MFof the mask M in the θX direction relative to the illumination area IAof the illumination system IL in synchronization with the movement ofthe substrate P in the Y axial direction. The images of the plurality ofpatterns MP on the mask M are formed sequentially on the substrate P asa result of the patterns MP on the mask M being illuminated by theexposure light EL while the mask M is rotated in synchronization withthe movement of the substrate P in the Y axial direction with the centeraxis J taken as the axis of rotation (step SA9).

The control apparatus 6 monitors the position information of the mask M(i.e., of the patterns MP) using the first detection system 5A of thedetection system 5, and exposes the substrate P using the images of thepatterns MP on the mask M by driving the mask M and the substrate Pwhile monitoring the position information of the substrate P (i.e., ofthe shot areas S) using the second detection system 5B. Namely, based ondetection results from the detection system 5, the control apparatus 6controls the mask driving apparatus 2 and the substrate drivingapparatus 4, and controls the driving of the mask M and the substrate Pwhen the images of the patterns MP on the mask M are being formed on thesubstrate P.

Specifically, while the mask M is being rotated, the first detectionsystem 5A projects detection light onto the mark formation area MB ofthe mask M using the respective light projection devices 501 of therespective encoders 51A through 51D of the encoder system 51, anddetects the detection light which has passed through the mark formationarea MB of this mask M using the respective light receiving devices 502.Moreover, while the mask M is being rotated, the first detection system5A projects detection light onto the pattern formation areas MA of themask M from the light projection device 52A of the focus and levelingdetection system 52, and detects the detection light which has passedthrough the pattern formation areas MA of the mask M using the lightreceiving device 52B. Namely, when the mask M is being rotated, thefirst detection system 5A detects the detection light which has passedthrough the mask M, and based on these detection results, acquiresposition information relating to the directions of the six degrees offreedom for the patterns MP on the mask M.

In addition, when the substrate P is being moved, the second detectionsystem 5B projects detection light onto the measuring mirrors of thesubstrate holding member 3 which is holding the substrate P using thelaser interferometer system 53, and detects the detection light whichhas transited these measurement mirrors. When the substrate P is beingmoved, the second detection system 5 also projects detection light ontothe surface of the substrate P using the light projection device 54A ofthe focus and leveling detection system 54, and detects the detectionlight which has transited the surface of the substrate P using the lightreceiving device 54B. Namely, when the substrate P is being moved, thesecond detection system 5B detects the detection light which hastransited the substrate P, and based on these detection results,acquires position information relating to the directions of the sixdegrees of freedom for the shot areas S on the substrate P.

Based on the position information relating to the six degrees of freedomof the patterns MP on the mask M including the circumferential direction(i.e., the θX direction) of the pattern formation surface MF which wererequired using the first detection system 5A, the control apparatus 6controls the driving in the directions of the six degrees of freedomincluding around the center axis J (i.e., the θX direction) for the maskM when the images on the patterns MP on the mask M are being formed onthe substrate P.

In addition, the control apparatus 6 controls the driving in thedirections of the six degrees of freedom of the substrate P when thepatterns MP on the mask M are being formed on the substrate P based onposition information relating to the six degrees of freedom of the shotareas S on the substrate P which were acquired using the seconddetection system 5B.

In this manner, based on position information relating to the directionsof the six degrees of freedom of the mask M and the substrate P whichwere acquired using the detection system 5, the control apparatus 6irradiates the exposure light EL onto the substrate P through the mask Mwhile adjusting the positions in the directions of the six degrees offreedom of the mask M and the substrate P (i.e., while adjusting therelative positional relationship between the mask M and the substrateP).

In the present embodiment, because six patterns MP are formed in thecircumferential direction of the pattern formation surface MF on themask M, when the mask M has rotated by substantially 60°, the exposureof the first shot area S1 is ended.

When the scan exposure has ended for the first shot area S1 which is tobe exposed first, the control apparatus 6 continues the rotation of themask M in the −θX direction and also continues the movement of thesubstrate P in the +Y direction without reducing the speed of either themask holding member 1 which is holding the mask M or the substrateholding member 3 which is holding the substrate P. The control apparatus6 performs the exposure of the second shot area S2 which is located onthe −Y side of the first shot area S1 in the same way as the exposure ofthe first shot area S1 was performed.

The control apparatus 6 continues the rotation of the mask M in the −θXdirection and also continues the movement of the substrate P in the +Ydirection without reducing the speed of either the mask holding member 1which is holding the mask M or the substrate holding member 3 which isholding the substrate P, and thus consecutively exposes the third shotarea S3 and the fourth shot area S4. In this manner, in the presentembodiment, in a single scan, the control apparatus 6 continuouslyexposes the shot areas S1 through S4 of a single row aligned in the Yaxial direction.

When the exposure of the fourth shot area S4 has ended, the controlapparatus 6 slows down the substrate holding member 3. The controlapparatus 6 determines whether or not the exposure of a single substrateP has ended, namely, determines whether or not all of the substrate Phas been exposed (step SA10). Here, only the exposure of the firstthrough fourth shot areas S1 through S4 has ended, and the remainingshot areas are still to be exposed.

In step SA10, if it is determined that the entire exposure of thesubstrate P has not yet been completed, the control apparatus 6 movesthe substrate P which is being held on the substrate holding member 3 tothe next exposure start position using the substrate driving apparatus4, while measuring the position information of the substrate holdingmember 3 (and consequently the position information of the shot areas Son the substrate P) which is holding the substrate P using the laserinterferometer system 53. In the present embodiment, the controlapparatus 6 moves the substrate P which is being held on the substrateholding member 3 such that, of the plurality of shot areas S1 throughS26, the fifth shot area S5 is placed in the vicinity of the +Y side ofthe projection area AR.

Moreover, in order to start the exposure of the substrate P, the controlapparatus 6 moves the mask M which is being held on the mask holdingmember 1 to the exposure start position (i.e., to the rotation startposition) using the mask driving apparatus 2, while measuring theposition information of the mask M (and consequently the positioninformation of the patterns MP on the mask M) which is being held on themask holding member 1 using the encoder system 51. The control apparatus6 detects the detection light which has transited the rotation startposition mark EMS using the fifth encoder 51S of the first detectionsystem 5A, and moves (i.e., rotates) the mask M to the rotation startposition when the mask M is being rotated in synchronization with themovement of the substrate P. In the present embodiment, the controlapparatus 6 moves the mask M which is being held on the mask holdingmember 1 such that, of the plurality of (i.e. six) pattern formationareas MA, the first pattern formation area MA is placed in the vicinityof the −Y side of the illumination area IA (step SA11).

In the present embodiment, the control apparatus 6 performs the movementof the mask M to the rotation start position in parallel with at least aportion of the movement of the substrate P to the exposure startposition. Moreover, the control apparatus 6 stops the irradiation of theexposure light EL onto the mask M (i.e., temporarily stops the exposureof the substrate P) while the mask M is being moved to the rotationstart position.

Moreover, here, in order to expose the first through fourth shot areasS1 through S4, the mask M is rotated in the −θX direction, and, afterthe exposure of the fourth shot area S4 has ended, the rotation in thesame direction as the direction followed during the exposure of thefirst through fourth shot areas S1 through S4, namely, the rotation inthe −θX direction is continued, resulting in the rotation start positionbeing more quickly reached compared with when the rotation is in theopposite direction, namely, in the +θX direction.

When the movement of both the mask M and the substrate P to theirexposure start positions is complete, the control apparatus 6 sets thedirection of movement (i.e., the direction of rotation) of the maskholding member 1 which is holding the mask M to the reverse direction,and sets the direction of movement of the substrate holding member 3which is holding the substrate P to the reverse direction (step SA12).

The control apparatus 6 controls the substrate driving apparatus 4 sothat the movement of the substrate P in the −Y direction is started, andcontrols the mask driving apparatus 2 so that the movement (i.e., therotation) of the mask M in the +θX direction is started.

When the speed of the movement of the substrate P in the −Y directionand the speed of the rotation of the mask M in the +θX direction arerespectively uniform, and the end portion on the −Y side of the fifthshot area S5 reaches the projection area AR, the control apparatus 6irradiates the exposure light EL from the illumination system IL. At thesame time as the control apparatus 6 is moving the substrate P in the −Ydirection in synchronization with the movement (i.e., the rotation) ofthe mask M in the +θX direction, it also illuminates the patterns MP onthe mask M using the exposure light EL and thereby projects images ofthe patterns MP on the mask M onto the substrate P via the projectionoptical system PL. The control apparatus 6 illuminates the patterns MPon the mask M using the exposure light EL while rotating the mask M withthe center axis J taken as the axis of rotation. By illuminating thepatterns MP on the mask M using the exposure light EL while rotating themask M with the center axis J taken as the axis of rotation insynchronization with the movement of the substrate P in the Y axialdirection, the images of the plurality of patterns MP on the mask M aresequentially formed on the substrate P (step SA9).

In this case as well, based on position information relating to thedirections of the six degrees of freedom of the mask M and the substrateP which were acquired using the detection system 5, the controlapparatus 6 irradiates the exposure light EL onto the substrate Pthrough the mask M while adjusting the positions in the directions ofthe six degrees of freedom of the mask M and the substrate P (i.e.,while adjusting the relative positional relationship between the mask Mand the substrate P).

When the scan exposure has ended for the fifth shot area S5, the controlapparatus 6 continues the rotation of the mask M in the +θX directionand also continues the movement of the substrate P in the −Y directionwithout reducing the speed of either the mask holding member 1 which isholding the mask M or the substrate holding member 3 which is holdingthe substrate P. The control apparatus 6 performs the exposure of thesixth shot area S6 which is located on the +Y side of the fifth shotarea S5 in the same way as the exposure of the fifth shot area S5 wasperformed.

The control apparatus 6 continues the rotation of the mask M in the +θXdirection and also continues the movement of the substrate P in the −Ydirection without reducing the speed of either the mask holding member 1which is holding the mask M or the substrate holding member 3 which isholding the substrate P, and thus consecutively exposes the seventh,eighth, ninth, and tenth shot areas S7, S8, S9, and S10. In this manner,in the present embodiment, in a single scan, the control apparatus 6continuously exposes the shot areas S5 through S10 of a single rowaligned in the Y axial direction.

As has been described above, in the present embodiment, the same numberof patterns MP of the mask M are formed extending in the circumferentialdirection on the pattern formation surface MF as the maximum number (sixin the present embodiment) of shot areas S in at least the scandirection (i.e., in the Y axial direction) of the substrate P.Accordingly, the control apparatus 6 is able to execute the exposure ofthe single row of shot areas S5 through S10 which are aligned in the Yaxial direction by rotating the mask M 360° (i.e., completing a singlerotation).

Thereafter, in the same way, each time the control apparatus 6 completesthe exposure of a single row of the shot areas S which are aligned inthe Y axial direction (i.e., S11 through S16, S17 through S22, and S23through S26), the direction of rotation of the mask M is set to thereverse direction (i.e., is inverted), and the direction of movement ofthe substrate P is set to the reverse direction, so that the exposureprocessing is executed in row units (step SA9 through SA12).

As a result of the above described operation being repeated so that, instep SA10, it is determined that all of the substrate P has beenexposed, the control apparatus 6 unloads the substrate P which is beingheld on the substrate holding member 3 (step SA13). Next, the controlapparatus 6 determines whether or not another substrate P which requiresexposure is present (step SA14). If it is determined in step SA14 thatanother substrate P requiring exposure is present, the control apparatus6 repeats the processing of step SA1 and the steps subsequent thereto.If, on the other hand, it is determined in step SA14 that no substrate Prequiring exposure is present, the control apparatus 6 ends the exposuresequence.

As has been described above, in the present embodiment, because a mask Mis formed such that the conditions of Formula (1) described above aresatisfied, it is possible to suppress any reduction in throughput andform superior images of the patterns MP on the substrate P.

Namely, if, for example, the diameter D of the mask M is extremelysmall, and the length in the circumferential direction of the mask M(π×D) is considerably smaller compared to the maximum length L of thesubstrate P, then in order to expose the plurality of shot areas S onthe substrate P, there is a possibility that it will be necessary, forexample, to rotate the mask M a plurality of times, or to frequentlychange the rotation direction of the mask M.

For example, if the length in the circumferential direction of the maskM (π×D) is small, so that only one pattern MP can be formed in thecircumferential direction on the pattern formation surface MF, then inorder, for example, to expose the shot areas S5 through S10, it isnecessary to rotate the mask M six times. If only one pattern MP isformed in the circumferential direction on the pattern formation surfaceMF, then the possibility may arise that, in order, for example, toexpose the fifth, sixteenth, and seventeenth shot areas S5, S16, and S17in that sequence, the mask M must be firstly rotated in the +θXdirection in order to expose the fifth shot area S5. Next, in order toexpose the sixteenth shot area S16, the mask M must be rotated in the−θX direction, and, finally, in order to expose the seventeenth shotarea S17, the mask M must be rotated in the +θX direction.

If the mask M is rotated a plurality of times, or if the direction ofmovement of the mask and/or the direction of movement of the substrateare frequently changed, there is a possibility that vibrations willoccur and that there will be a deterioration in the exposure accuracy.In order to accurately expose the substrate P while moving the substratePin synchronization with the movement of the mask M, after theacceleration of the mask and/or substrate has ended, it is necessary toget the generated vibration under control and secure a sufficiently longwait time (i.e., a static time) for the speed to become constant. Inthis case, there is an increase in the length of time which is not usedfor exposure, and there is a possibility that a deterioration inthroughput will occur.

Moreover, the size of the shot areas S varies in accordance with thesize of the device being manufactured, however, in cases in which, forexample, the diameter D of the mask M is extremely small, and the lengthin the circumferential direction of the mask M (π×D) is extremely smallcompared to the maximum length L of the substrate P, then there arelimits on the size of the pattern MP (i.e., the size in thecircumferential direction) which can be formed on the mask M, and thereis a possibility that, for example, it will not be possible to properlyform shot areas S having a predetermined size in the X axial direction.Moreover, in cases in which the rotation direction of the mask M isprevented from being frequently changed in order to suppress vibrationand the like, or in cases when the shot areas S are exposed while themask M is being rotated as much as possible at a constant velocity, ifthe length in the circumferential direction of the mask M (π×D) is smalland there are restrictions on the size and placement of the pattern MPin the circumferential direction of the mask M, then restrictions becomeimposed on the placement of the shot areas S on the substrate P, andthere is a possibility that defects will occur that increase the numberof wasted areas on the substrate P such as, for example, the gap betweenadjacent shot areas S in the Y axial direction on the substrate P beingincreased, or the number of shot areas that can be formed being reduced.

In contrast, altering the size (i.e., the diameter D) of the mask M inaccordance with the device being manufactured (i.e., in accordance withthe size of the shot areas S) means that the processing to maintainexposure accuracy becomes more complex, and may lead to a likelihoodthat manufacturing costs will rise due to the fact that it becomesnecessary to manufacture a plurality of different sized masks M. Forexample, if the diameter D of the mask M is changed without the positionof the axis of rotation (i.e., the center axis J) of the mask M beingchanged, then because there is a change in the positional relationshipbetween the projection optical system PL and the mask M, specifically, achange in the positional relationship between the substance surface ofthe projection optical system PL and the bottommost portion BT of themask M where the exposure light EL is irradiated, each time the size ofthe mask M changes, the possibility arises that it will become necessaryto alter the optical characteristics of the projection optical systemPL. Moreover, by altering the size (i.e., the diameter D) of the mask M,and changing the position of the axis of rotation (i.e., the center axisJ) of the mask M, even if the positional relationship between thesubstance surface of the projection optical system PL and the bottommostportion BT of the mask M where the exposure light EL is irradiated ismaintained, because the curvature of the mask M changes, in this case aswell, the possibility arises that it will become necessary to correctthe optical characteristics of the projection optical system PL.

In the present embodiment, because the mask M is formed so as to satisfythe conditions of Formula (1), it is possible to suppress the occurrenceof the above described malfunctions, and control any deterioration inthroughput, and form superior images of the patterns MP on a substrateP. Namely, simply by rotating the mask M once (i.e., rotating it) 360°,it is possible to smoothly expose a plurality of (i.e., six shot areaswhich are aligned in the portion of the maximum length L of thesubstrate P. Moreover, even if the shot areas which are aligned inportions other than the portion of the maximum length L of the substrateP (for example, the first through fourth shot areas S1 through S4) areto be exposed, then the mask M does not even need to complete a fullrotation, and simply by being rotated approximately 240°, it is possibleto suppress the occurrence of vibration or the like, and smoothly exposethe first through fourth shot areas S1 through S4. After the fourth shotarea S4 has been exposed, as is described above, it is possible to limitany reduction in throughput by executing the movement of the mask M tothe rotation start position in parallel with at least a portion of themovement of the substrate P to the exposure start position.

Furthermore, by forming the mask M so as to satisfy the conditions ofFormula (1), it is possible to increase the radius of curvature of themask M and decrease the curvature of the patterns MP. Moreover, byforming the mask M so as to satisfy the conditions of Formula (1), it ispossible to it is possible to increase the moment of inertia of the maskM, and to thereby stabilize the rotation of the mask M.

In addition, because a plurality of the patterns MP are formed on thepattern formation surface MF of the mask M, it is possible to form theimages of the plurality of patterns MP on the substrate P in a singlescan operation while limiting the number of changes (i.e., switches) inthe direction of movement of the mask M, and while also limiting thenumber of changes (i.e., of switches) in the direction of movement ofthe substrate P which accompany the changes in the direction of movementof the mask M.

Furthermore, because the same number of patterns MP are formed extendingin the circumferential direction on the pattern formation surface MF ofthe mask M as the maximum number of shot areas S which are formed in theY axial direction on the substrate. P, it is possible to execute theexposure of a single row of shot areas S which are aligned in the Yaxial direction simply by rotating the mask M once.

Moreover, in the present embodiment, because the mask holding member 1holds the side surface MS of the mask M such that the mask M can bereplaced, it is possible to smoothly replace a mask M without thisleading to any reduction in throughput, for example.

In addition, because the mask holding member 1 is placed on one end side(i.e., on the +X side) of the shaft member 20 which rotatably supportsthis mask holding member 1, it is possible to smoothly load a mask Monto the mask holding member 1 from this one end side of the shaftmember 20, and it is possible to smoothly unload a mask M which is beingheld on the mask holding member 1 from this one end side of the shaftmember 20.

Moreover, in the present embodiment, because the mask driving apparatus2 is provided which is able to move the mask holding member 1 which isholding a mask M in the directions of the six degrees of freedom, it ispossible to adjust the position of the mask M, and to accurately adjustthe positional relationship between the mask M and the substrate P, andto expose a superior image of a pattern MP on the mask M onto thesubstrate P.

Moreover, in the present embodiment, the anti-vibration apparatus 24 isprovided which includes the countermass 46 which suppresses vibrationcaused by the movement (i.e., the rotation of the mask holding member 1which is holding the mask M. Accordingly, it is possible to suppress anyvariation in the positional relationship between the mask M and thesubstrate P which is caused by this vibration, and it is this possibleto suppress any deterioration in exposure accuracy which is caused bythis vibration.

Moreover, in the present embodiment, the mask holding member 1 which isholding the mask M is located on the one end side (i.e., on the +X side)of the shaft member 20, and the weight member 22 is placed on the otherend side (i.e., on the −X side) of this shaft member 20. The supportmember 21 which rotatably supports the shaft member 20 is placed betweenthe mask holding member 1 and the weight member 22. The weight member 22functions as what is known as a balance weight, and prevents a loadbeing applied to one end side only of the shaft member 20. Accordingly,it is possible to prevent any variation in the second gap G2, the thirdgap G3, and the fourth gap G4 which is due to an unbalanced load, andrestrict contact between the shaft member 20 and the support member 21.Accordingly, the shaft member 20 can be made to rotate smoothly whilethe occurrence of vibration is suppressed.

Moreover, in the present embodiment, the shaft member 20 and the weightmember 22 are formed as a single unit, however, it is also possible toprovide a holding mechanism which removably holds the weight member 22at the other end side of the shaft member 20, so that the weight member22 can be replaced. Because the weight member 22 functions as a balanceweight, a plurality of weight members 22 having respectively differentweights can be prepared, and a weight member 22 of a suitable weight canbe mounted on the other end side of the shaft member 20 to correspond tothe size (i.e., to the weight) of the mask M which is being used.Alternatively, the weight member 22 can be omitted according to theweight of the mask M.

Second Embodiment

Next, a second embodiment will be described. In the description givenbelow, member elements that are identical or equivalent to those in theabove described embodiment are given the same symbols and anydescription thereof is either simplified or omitted.

In the above described first embodiment, the mask M is formed so as tosatisfy the conditions of Formula (1), however, if the diameter of themask M on the pattern formation surface MF is taken as D, if the maximumlength of the substrate P in the scanning direction of the substrate P(i.e., the Y axial direction in the present embodiment) is taken as L,if the projection ratio of the projection optical system PL is taken asβ, and if the circumference ratio is taken as π, then it is alsopossible to form the mask M such that the conditions for the followingformula are satisfied.(β×L)/π>D≧(β×L)/(2×π)  (2)

For example, if the mask M is formed such that the conditions for theabove-described Formula (1) are satisfied, and the size of the mask M isincreased, then by forming the mask M such that the conditions for theabove-described Formula (2) are satisfied, it is possible to both limitany reduction in throughput, and also suppress any deterioration inexposure accuracy.

If the mask M is formed such that the conditions for Formula (2) aresatisfied, then in order, for example, to expose the shot areas S in theportion of the maximum length L of the substrate P, there is apossibility that it will become necessary to rotate the mask M more thanonce (but not more than twice). However, by forming the mask M such thatthe conditions for the above-described Formula (2) are satisfied, it ispossible to suppress any defects that might occur due to the increasedsize of the mask M, and limit any reduction in throughput, and alsosuppress any deterioration in exposure accuracy.

Furthermore, by satisfying the conditions for D≧(β×L)/(2×π), it ispossible to suppress the occurrence of defects that are due to the smallsize of the mask M while maintaining the desired throughput. Namely, ifthe size of the mask M is reduced excessively, there is a possibilitythat it may not be possible to achieve the desired throughput, or thatthe radius of curvature of the mask M will become smaller so that thecurvature of the patterns MP will increase, or that the moment ofinertia of the mask M will become too small so that the rotation of themask M becomes unstable. However, by satisfying the conditions forFormula (2), it is possible to suppress the occurrence of theseproblems.

Note that in each of the above described embodiments, a case in whichthe substrate P has a substantially circular shape within the XY planeis described as an example however, it is also possible for thesubstrate P to have a shape other than a circular shape such as, forexample, a rectangular shape (i.e., an oblong shape) or the like. Evenif the shape of the substrate P within an XY plane is a shape other thana circular shape, by still forming the mask M such that the conditionsfor Formula (1) or Formula (2) are satisfied based on the maximum lengthL of the substrate P in the scanning direction of the substrate P (i.e.,in the Y axial direction), it is possible to suppress any reduction inthroughput and form a superior image of the pattern on the substrate.

Note that in each of the above described embodiments, a reflective typeof mask is used for the mask, however, it is also possible to use atransmission type of mask. In this case, the illumination system ILirradiates the exposure light EL, for example, on the topmost portion ofthe mask M. The exposure light EL which has passed through the mask Mand passed through the bottommost portion BT of the mask M then entersthe projection optical system PL.

Note also that in each of the above described embodiments, the mask Mhas a circular cylinder shape, however, it may also have a circularcolumn shape. In this case, a portion of the protruding portion 28 andthe shaft member 20 of the mask holding member 1 which protrude on the+X side from the holding surface 26 are omitted.

Note also that in each of the above described embodiments, a pluralityof the patterns MP are formed in the circumferential direction on thepattern formation surface MF of the mask M, however, depending, forexample, on the size of the device being manufactured (i.e., on the sizeof the shot areas S), it is not absolutely essential for a plurality ofthe patterns MP to be formed in the circumferential direction on themask M. For example, even if there is only one pattern MP, by stillforming the mask M such that the conditions for Formula (1) or Formula(2) are satisfied, it is possible to suppress any reduction inthroughput and form a superior image of the pattern on the substrate P.

Note also that in each of the above described embodiments, it is alsopossible for a plurality of the patterns MP to be formed in thedirection of the center axis J (i.e., in the X axial direction) of themask M.

Note also that in each of the above described embodiments, it is alsopossible for an immersion method to be used such as that disclosed in,for example, PCT International Publication No. WO99/49504. Namely, in astate in which an optical path space for the exposure light EL betweenthe projection optical system PL and the substrate P, in other words, anoptical path space between the distal end of the projection opticalsystem PL and the image plane (i.e., emission surface) side of theoptical element is filled with a liquid, it is possible to irradiate theexposure light EL onto the substrate P via the mask M, the projectionoptical system PL, and the liquid, so that the images of the patterns MPon the mask M are formed on the substrate P. Moreover, if an immersionmethod is used, then it is also possible to employ a localized immersionsystem in which a liquid immersion area which is larger than theprojection area AR but smaller than the substrate P is formed on aportion of the area on the substrate P so as to cover the projectionarea AR, as is disclosed in, for example, PCT International PublicationNo. W99/49504. Alternatively, it is also possible to employ a globalimmersion system in which exposure is performed with the entire surfaceof the substrate which is to be exposed being immersed in the liquid, asis disclosed in, for example, Japanese Patent Application PublicationNos. H06-124873 A and H10-303114 A, and in U.S. Pat. No. 5,825,043. Theliquid that is used may be water (i.e., pure water), or may be a liquidother than water such as perfluoropolyether (PFPE), a fluorine-basedfluid such as fluorine oil, cedar oil, and the like. Moreover, if animmersion method is used, then it is also possible for an optical pathspace on a substance surface (i.e., incident surface) side of a distalend optical element to be filled with a liquid as is disclosed in PCTInternational Publication No. WO2004/019128.

In an exposure apparatus which uses an immersion method, the opticalelement (i.e., the final optical element and the like) of the projectionoptical system PL may be formed, for example, from quartz (silica).Alternatively, the optical element may be formed from a mono-crystallinematerial such as a fluoride compound such as calcium fluoride(fluorite), barium fluoride, strontium fluoride, lithium fluoride, andsodium fluoride. Alternatively, the optical element may be formed from amaterial having a higher refractive index than that of quartz orfluorite (for example, 1.6 or more). Examples of materials having arefractive index of 1.6 or more include the sapphire and germaniumdioxide disclosed in PCT International Publication No. WO2005/059617, orthe potassium chloride (which has a refractive index of approximately1.75) and the like disclosed in PCT International Publication No. WO2005/059618. Furthermore, it is also possible to form a thin film havinglyophilicity and/or a dissolution prevention function on a portion of(including at least the contact surface with the liquid) or on all ofthe surface of the optical element. Note that quartz has a high level ofaffinity with liquid and does not require a dissolution prevention film,however, it is possible to form at least a dissolution prevention filmwith fluorite. Liquids having a higher refractive index than that ofpure water (for example, 1.5 or more) which can be used for theimmersion include, for example, predetermined liquids having a C—H bondor an O—H bond such as isopropanol having a refractive index ofapproximately 1.50, glycerol (glycerin) having a refractive index ofapproximately 1.61, predetermined liquids (i.e., organic solvents) suchas hexane, heptane, decane, and the like or decalin (i.e.,decahydronaphthalene) having a refractive index of approximately 1.60.Moreover, the liquid may also be a mixture of any desired two or moreliquids chosen from among these, or may be a mixture of pure water andat least one added (i.e., admixed) liquid chosen from among these.Furthermore, the liquid may also be obtained by adding (i.e., admixing)a salt or an acid such as H⁺, Cs⁺, K⁺, Cl⁻, SO₄ ²⁻ or the like to purewater, or by adding (i.e., admixing) fine particles of aluminum oxide orthe like to pure water. Note also that the immersion liquid ispreferably one that has a low absorption coefficient of light, that haslow temperature dependency, and that exhibits stability towards thephotosensitive material (or the top coat film or anti-reflection film orthe like) coated on the projection optical system and/or the surface ofthe substrate. It is possible to provide a top coat that protects thephotosensitive material and the substrate from the liquid on thesubstrate.

Note also that in each of the above described embodiments, ArF excimerlaser light is used for the exposure light EL, however, if a reflectivemask is used for the mask M, then it is also possible to use soft X-rays(EUV) as the exposure light EL. The patterns MP of a reflective mask canbe formed based on an EB rendering method using an EB exposure machineas is disclosed, for example, in Japanese Patent Application PublicationNo. H07453672 A. A reflective mask can be formed by providing amultilayer film including Mo, Si, or the like on a base material such asquartz or ceramic or the like, and by then forming a pattern of anabsorber which is able to absorb EUV and which includes Cr, W, Ta, orthe like on this multilayer film.

Note also that the substrate P in each of the above describedembodiments may be formed not only by a semiconductor wafer which isused for manufacturing semiconductor devices, but also by a glasssubstrate which is used for a display device, a ceramic wafer for a thinfilm magnetic head, or by the original plate (formed by synthetic quartzor a silicon wafer) of a mask or reticle which is used in an exposureapparatus, or by a film member or the like. In addition, the shape ofthe substrate is not limited to being a circular shape, and may beanother shape such as a rectangle or the like.

The exposure apparatus EX may be a step-and-scan type of scanningexposure apparatus (i.e., a scanning stepper) which scan exposes asubstrate P using images of patterns MP on a mask M while moving thesubstrate P in synchronization with the mask M. In addition to this, thepresent invention may also be used in a step-and-repeat type ofprojection exposure apparatus (i.e., a stepper) which moves a substrateP in sequential steps and collectively exposes the substrate P using theimages on the patterns MP of the mask M with the mask M and thesubstrate P in a static state.

Furthermore, during a step-and-repeat exposure, when the first patternand the substrate P are substantially stationary, it is also possible tofirst transfer a reduced image of the first pattern onto the substrate Pusing a projection optical system, and when the second pattern and thesubstrate P are substantially stationary, to then collectively expose areduced image of the second pattern on the substrate P using theprojection optical system such that it is partially superimposed overthe first pattern (using a stitch type of collective exposureapparatus). This stitch type of exposure apparatus may be astep-and-stitch type of exposure apparatus which transfers at least twopatterns onto a substrate P such that they partially overlap, and movesthe substrate sequentially.

Moreover, the present invention may also be applied to a multi-stagetype (i.e., a twin-stage type) of exposure apparatus which is providedwith a plurality of substrate stages such as those disclosed in JapanesePatent Application Publication Nos. H10-163099 A, H10-214783 A(corresponding to U.S. Pat. Nos. 6,341,007, 6,400,441, 6,549,269, and6,590,634), and Japanese Patent Application Publication No. 2000-505958A (corresponding to U.S. Pat. No. 5,969,441).

Furthermore, the present invention can also be applied to an exposureapparatus which is provided with a substrate stage which holds asubstrate, and with a measurement stage on which are mounted referencemembers on which reference marks are formed and/or various types ofphotoelectric sensor such as those disclosed in, for example, JapanesePatent Application Publication Nos. H11-135400 A (corresponding to PCTInternational Publication No. WO1999/23693) and 2000-164504 A(corresponding to U.S. Pat. No. 6,897,963).

The type of exposure apparatus which is used for the exposure apparatusEX is not limited to those which are used to manufacture semiconductorelements and which expose a semiconductor element pattern onto asubstrate P, and a broad variety of exposure apparatuses and the likemay be used including exposure apparatuses which are used to manufactureliquid crystal display elements or display units, and exposureapparatuses used to manufacture thin-film magnetic heads, image pickupdevices (CCD), micromachines, MEMS, DNA chips, and reticles and masks,and the like.

Moreover, as is disclosed, for example, in Published JapaneseTranslation No. 2004-519850 of PCT International Publication(corresponding to U.S. Pat. No. 6,611,316), the present invention canalso be applied to an exposure apparatus in which the patterns of twomasks are synthesized on a substrate via a projection optical system,and that performs double exposures substantially simultaneously of asingle shot area on a substrate in a single scan exposure operation.

As far as is permitted, the disclosures in all of the PatentPublications and U.S. patents related to exposure apparatuses and thelike cited in the above respective embodiments and modified examples,are incorporated herein by reference.

As has been described above, the exposure apparatus EX is manufacturedby assembling various subsystems which include respective memberelements such that they have a predetermined mechanical accuracy,electrical accuracy and optical accuracy. In order to secure theselevels of accuracy, both before and after the assembly steps,adjustments to achieve optical accuracy in the various optical systems,adjustments to achieve mechanical accuracy in the various mechanicalsystems, and adjustments to achieve electrical accuracy in the variouselectrical systems are made. The assembly step to assemble an exposureapparatus from the various subsystems includes making mechanicalconnections, electrical circuit wiring connections, and air pressurecircuit tube connections and the like between the various subsystems.Prior to the assembly step to assemble an exposure apparatus from thevarious subsystems, it is of course necessary to perform assembly stepsto assemble the respective individual subsystems. Once the assembly stepto assemble an exposure apparatus from the various subsystems has ended,comprehensive adjustments are made so as to secure various levels ofaccuracy in the exposure apparatus as a whole. Note that it is desirablefor the manufacturing of the exposure apparatus to be conducted in aclean room in which temperature and cleanliness and the like arecontrolled.

As is shown in FIG. 18, a micro device such as a semiconductor device ismanufactured via a step 201 in which the functions and performance ofthe micro device are designed, a step 202 in which a mask (i.e., areticle) that is based on the design step is manufactured, a step 203 inwhich a substrate that forms the base material of the device ismanufactured, a substrate processing step 204 that includes substrateprocessing (i.e., exposure processing) in which a substrate is exposedusing an image of a pattern on the mask and the exposed substrate isthen developed, a device assembly step 205 (including working processessuch as a dicing step, a bonding step, a packaging step and the like),and an inspection step 206.

According to some aspects of the present invention, it is possible tosuppress any deterioration in throughput and form a superior image of apattern on a substrate. Accordingly, it is possible to manufacture adevice which has a desired performance with a high level ofproductivity.

What is claimed is:
 1. An exposure apparatus that transfers an image ofa pattern of a mask onto a substrate moving in a predetermined directionby a scanning exposure, the exposure apparatus comprising: a maskdriving apparatus that is configured to rotate a mask about apredetermined axis as a rotation axis, the mask having a body with acircular cylinder shape or a circular column shape, the mask having apatterned area and a pair of scale marks for a measurement with anencoder, the patterned area having the pattern and being formed along acircumferential surface of the body, the circumferential surface havinga circular cylinder shape that is defined with a constant radius withrespect to the predetermined axis, the pair of scale marks being formedalong the circumferential surface and arranged at both areas between thepatterned area and both axial ends of the circumferential surface, thepair of scale marks being provided substantially all around thecircumferential surface and each having a predetermined positionalrelationship with respect to the patterned area; an illuminationapparatus that is configured to provide exposure light onto thecircumferential surface of the mask, an illumination area of theexposure light having a substantially rectangular shape that has alongitudinal axis along the predetermined axis; a detection system thatis configured to acquire position information relating to the pattern,the detection system having a first encoder system and a second encodersystem, the first encoder system being arranged so as to face a firstscale mark of the pair of scale marks and to measure a position of thefirst scale mark in a rotation direction about the predetermined axis,and the second encoder system being arranged so as to face a secondscale mark of the pair of scale marks and to measure a position of thesecond scale mark in a rotation direction about the predetermined axis;and a substrate driving apparatus that moves the substrate at apredetermined speed so that the pattern is continuously exposed in ascanning exposure direction on the substrate, wherein the mask drivingapparatus controls the driving of the mask around the predetermined axiswhen an image of a pattern of the mask is scanning exposed onto thesubstrate based on position information in the rotation directionacquired by the first encoder system and the second encoder system, andthe mask driving apparatus controls a speed of the circumferentialsurface of the mask which is obtained based on position information inthe rotation direction acquired by the first encoder system or thesecond encoder system and a pitch of the scale marks in a rotationdirection so that a speed of the substrate synchronizes with the speedof the circumferential surface of the mask.
 2. The exposure apparatusaccording to claim 1, wherein each of the first encoder system and thesecond encoder system is an optical encoder which projects light ontothe scale marks and detects reflected light by a light receiving device.3. The exposure apparatus according to claim 2, wherein each of thefirst scale mark and the second scale mark is an incremental type or anabsolute type.
 4. The exposure apparatus according to claim 2, whereineach of the first scale mark and the second scale mark has a diffractiongrating which contains two-dimensional position information in therotation direction and in a direction along the predetermined axis, andis formed along the circumferential surface of the mask, and each of thefirst encoder system and the second encoder system has a plurality oflight receiving elements which measure two-dimensional position in therotation direction and in the direction along the predetermined axis ofthe circular cylinder shape mask, and acquire position information indirections of three degrees of freedom of the pattern on the mask basedon two-dimensional position information from the plurality of the lightreceiving elements.
 5. The exposure apparatus according to claim 4,wherein the detection system has an optical focus and leveling detectionsystem which detects a position change in directions of three degrees offreedom of a predetermined area which comprises an illumination area onthe circumferential surface of the mask irradiated by the exposure lightfrom the illumination apparatus, and the detection system acquiresposition information in directions of six degrees of freedom of thepattern on the mask together with the position information in directionsof three degrees of freedom acquired by the first encoder system and thesecond encoder system.
 6. The exposure apparatus according to claim 1,wherein each of the first encoder system and the second encoder systemare arranged so as to face each of the first scale mark and the secondscale mark, respectively, separated from each other in a direction of aline which is in parallel with the predetermined axis which becomes acenter of a rotation of the mask.
 7. The exposure apparatus according toclaim 1, further comprising: a projection optical system, wherein aplurality of alignment marks are intermittently arranged in the rotationdirection on the mask in a positional relationship which is defined withrespect to the pattern within the patterned area, and the projectionoptical system is capable of projecting a part of the pattern within thepatterned area of the mask irradiated by the exposure light from theillumination apparatus, and the alignment marks, toward the substrate ata predetermined projection ratio.
 8. The exposure apparatus according toclaim 7, wherein the detection system comprises a light receiving devicethat receives light from the alignment marks via the projection opticalsystem.
 9. The exposure apparatus according to claim 1, furthercomprising: a substrate holding member that is capable of holding aplurality of removable substrates and that is arranged to be driven, bythe substrate driving apparatus, at a predetermined speed so that thepattern is continuously exposed in a scanning exposure direction on thesubstrate; and a substrate driving apparatus that drives the substrateholding member, wherein, when a length in the direction of the scanningexposure of the substrate is taken as L, and a diameter of thecircumferential surface of the mask is taken as D, and a projectionratio is taken as β, and circumference ratio is taken as π, then theconditions for D≧(β×L)/π are satisfied.
 10. The exposure apparatusaccording to claim 1, wherein the mask has a reference mark, whichcorresponds to a start position in the rotation direction of thepatterned area, at a predetermined position in the rotation direction,the detection system comprises a light receiving device that opticallydetects the reference mark in order to acquire information regarding arotation start position when the mask rotates in a synchronized mannerwith a movement of the substrate.
 11. A device manufacturing method,wherein the substrate is a glass substrate or a film member, and thedevice manufacturing method exposes a pattern formed on the mask ontothe glass substrate or the film member by using the exposure apparatusaccording to claim
 1. 12. An exposure method of transferring an image ofa pattern of a mask onto a substrate moving in a predetermined directionby a scanning exposure, the exposure method comprising: irradiatingexposure light onto a mask rotating about a predetermined axis as acenter, the mask having a body with a circular cylinder shape or acircular column shape, the mask having a patterned area and a pair ofscale marks for a measurement with first and second encoder systems,respectively, the patterned area having the pattern and being formedalong a circumferential surface of the body, the circumferential surfacehaving a circular cylinder shape that is defined with a constant radiuswith respect to the predetermined axis, the pair of scale marks beingformed along the circumferential surface and arranged at both areasbetween the patterned area and both axial ends of the circumferentialsurface, the pair of scale marks being provided substantially all aroundthe circumferential surface and each having a predetermined positionalrelationship with respect to the patterned area, the exposure lightbeing irradiated onto a part of the patterned area, an irradiation areaof the exposure light having a rectangular shape that has a longitudinalaxis along the predetermined axis; acquiring position information of thepair of scale marks in a rotation direction about the predetermined axisby using the first and second encoder systems which are arranged so asto face the pair of scale marks, respectively; moving the substrate at apredetermined speed so that the pattern is continuously exposed in ascanning exposure direction on the substrate; and controlling thedriving of the mask around the predetermined axis when an image of apattern of the mask is scanning exposed onto the substrate based onposition information in the rotation direction acquired by the first andsecond encoder systems, and controlling a speed of the circumferentialsurface of the mask which is obtained based on position information inthe rotation direction acquired by the first encoder system or thesecond encoder system and a pitch of the scale marks in a rotationdirection so that a speed of the substrate synchronizes with the speedof the circumferential surface of the mask.
 13. A device manufacturingmethod, wherein the substrate is a glass substrate or a film member, andthe device manufacturing method transfers a pattern formed on the maskonto the glass substrate or the film member by using the exposure methodaccording to claim
 12. 14. The device manufacturing method according toclaim 13, wherein a pattern for manufacturing a semiconductor element, aliquid crystal display element, a display unit, a thin-film magnetichead, an image pickup device (CCD), a micromachine, a MEMS, or a DNAchip is formed at the patterned area of the mask.